Secondary ion mass spectrometry generates swelling of GaSb: Depth resolution and secondary ion yields

1993 ◽  
Vol 73 (5) ◽  
pp. 2051-2056 ◽  
Author(s):  
M. Gauneau ◽  
R. Chaplain ◽  
A. Rupert ◽  
Y. Toudic ◽  
R. Callec ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Resolution ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

scholarly journals Enhancing Secondary Ion Yields in Time of Flight-Secondary Ion Mass Spectrometry Using Water Cluster Primary Beams

2013 ◽  
Vol 85 (12) ◽  
pp. 5654-5658 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Andrew Barber ◽  
John S. Fletcher ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Mass Spectrometry ◽  
Water Cluster ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements

2019 ◽  
Vol 25 (2) ◽  
pp. 517-523
Author(s):  
Alain Portavoce ◽  
Khalid Hoummada ◽  
Lee Chow
Keyword(s):  
Mass Spectrometry ◽  
Atom Probe Tomography ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Resolution ◽  
Atom Probe ◽  
Atomic Diffusion ◽  
Advantages And Disadvantages ◽  
Ion Mass Spectrometry ◽  
Long Time ◽  
Secondary Ion

AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.

scholarly journals Enhancing Ion Yields in Time-of-Flight-Secondary Ion Mass Spectrometry: A Comparative Study of Argon and Water Cluster Primary Beams

2015 ◽  
Vol 87 (4) ◽  
pp. 2367-2374 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Irma Berrueta Razo ◽  
Taylor Kohn ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Mass Spectrometry ◽  
Comparative Study ◽  
Water Cluster ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

High-Precision Characterization of III-Nitride Semiconductor Alloys with Secondary Ion Mass Spectrometry (SIMS)

1995 ◽  
Vol 395 ◽  
Author(s):  
J W. Erickson ◽  
Y. Gao ◽  
R. G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Great Sensitivity ◽  
Common Interest ◽  
Matrix Composition ◽  
Calibration Curves ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion ◽  
Better Than

ABSTRACTSamples of representative AlxGayIn1−x-yN compositions have been studied with secondary ion mass spectrometry (SIMS). First, ionized species of common interest (H, B, C, O, Mg, Si, and Cd) were implanted into the Ill-nitride samples to provide calibrated standards. Depth profiles and conversion factors for quantification of dopants were then obtained using O2+ or Cs+bombardment and positive or negative SIMS to measure B+ and Mg+; H−, B−, C−, O−, and Si−; and CdCs+. In addition calibration curves for quantification of stoichiometry were prepared using MCs+ ions (NCs+, AlCs−, GaCs+, InCs+) for which the ion yields are relatively independent of the matrix composition; and using atomic, dimer, and trimer ions (Al, Ga, In, Al2, Ga2, In2, Al3, Ga3) which are very sensitive to matrix composition. The empirical calibration curves show small non-linearities. Dopant concentrations can be quantified with great sensitivity (detection limits usually below 1 ppm), accuracy (usually better than 10%), and precision (better than 25%). Matrix stoichiometry can be quantified with an accuracy of about 1–3%.

Sign in / Sign up

Export Citation Format

Share Document