Self‐interstitial mechanism for Zn diffusion‐induced disordering of GaAs/AlxGa1−xAs (x=0.1−1) multiple‐quantum‐well structures
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1995 ◽
Vol 196-201
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pp. 1643-1648
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1997 ◽
Vol 258-263
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pp. 1839-0
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1999 ◽
Vol 273-274
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pp. 754-758
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1987 ◽
Vol 48
(C5)
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pp. C5-457-C5-461
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