Self‐consistent analysis of electric field‐dependent intersubband transitions for a thin layer inserted quantum well

1993 ◽  
Vol 73 (9) ◽  
pp. 4484-4488 ◽  
Author(s):  
W. Q. Chen ◽  
T. G. Andersson
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Thin Layer ◽  
Intersubband Transitions ◽  
Self Consistent ◽  
Field Dependent

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Tunnel Currents in the Photo-Field Detectors and the Auger Transistor under Strong Electric Field

2002 ◽  
Vol 744 ◽  
Author(s):  
Vladimir D. Kalganov ◽  
Nina V. Mileshkina ◽  
Elena V. Ostroumova ◽  
Ekaterina A. Rogacheva
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Strong Electric Field ◽  
Semiconductor Heterostructures ◽  
Semiconductor Surface ◽  
Metal Insulator ◽  
Near Surface ◽  
Field Emitter ◽  
Metal Insulator Semiconductor ◽  
Self Consistent

ABSTRACTThe photo-field emission properties of semiconductors at a very strong electric field together with tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunneltransparent layer of an insulator was studied. It was found that a self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation semiconductor field emitter detectors, and leads to the significant increase in their photosensitivity [1]. Also the appearance of a self-consistent quantum well near the semiconductor surface is the key factor which allows to use the metal-insulator heterojunction in the development of an Auger transistor based on the Al-SiO2-n-Si structure - the fastest operation semiconductor bipolar transistor [2–4]. Conditions for appearance of a self-consistent quantum well under strong electric field in both the near-surface region of a vacuum semiconductor field-emitter and metal-insulator-semiconductor heterostructures (Auger transistor) were studied also.

Electric-field-dependent photoresponse of multiple quantum well modulator

1989 ◽  
Vol 25 (4) ◽  
pp. 269 ◽  
Author(s):  
R.J. Manning ◽  
P.J. Bradley ◽  
A. Miller ◽  
J.S. Roberts ◽  
P. Mistry ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Field Dependent

Electric‐field‐dependent electroreflectance spectra of visible‐band‐gap (InAlGa)P quantum‐well structures

1994 ◽  
Vol 64 (14) ◽  
pp. 1824-1826 ◽  
Author(s):  
I. J. Fritz ◽  
O. Blum ◽  
R. P. Schneider ◽  
A. J. Howard ◽  
D. M. Follstaedt
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Band Gap ◽  
Quantum Well Structures ◽  
Visible Band ◽  
Field Dependent
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