End-group effects on negative differential resistance and rectifying performance of a polyyne-based molecular wire

2010 ◽  
Vol 97 (24) ◽  
pp. 242109 ◽  
Author(s):  
M. Qiu ◽  
Z. H. Zhang ◽  
X. Q. Deng ◽  
J. B. Pan
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Wire ◽  
End Group ◽  
Group Effects

Effect of length and negative differential resistance behavior in conjugated molecular wire tetrathiafulvalene devices

2015 ◽  
Vol 29 (20) ◽  
pp. 1550106 ◽  
Author(s):  
Xiaojiao Zhang ◽  
Keqiu Chen ◽  
Mengqiu Long ◽  
Jun He ◽  
Yongli Gao
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Molecular Devices ◽  
Molecular Wire ◽  
Length Effect ◽  
Functional Theory ◽  
Current Voltage ◽  
The Density Functional Theory

The electronic transport properties of molecular devices constructed by conjugated molecular wire tetrathiafulvalene (TTF) have been studied by applying nonequilibrium Green’s functions in combination with the density-functional theory. Two molecular junctions with different wire lengths have been considered. The results show that the current–voltage curves of TTF devices can be modulated by the length of the molecular wire and negative differential resistance behaviors are observed in these systems. The mechanisms have been proposed for the length effect and negative differential resistance behavior.

scholarly journals Investigation of transport behavior in borospherene-based molecular wire for rectification applications

2021 ◽  
Author(s):  
Rajan Vohra ◽  
Harleen Kaur ◽  
Jupinder Kaur ◽  
Ravinder Kumar
Keyword(s):  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Molecular Wires ◽  
Molecular Wire ◽  
Rectification Ratio ◽  
Linear Behavior ◽  
Voltage Curve ◽  
Non Linear ◽  
Current Voltage Curve

AbstractThe transport properties of molecular wire comprising of B40 fullerene are investigated by employing density functional theory (DFT) and non-equilibrium green’s function (NEGF) methodology. The quantum transport is evaluated by calculating the density of states, transmission spectra at various bias voltages, molecular energy spectra, HOMO-LUMO gap, current–voltage curve, and transmission pathways. In context to its properties, results show that by increasing the length of molecular wire, the device exhibits rectification ratio and prominent NDR behavior. I–V curve scrutinizes that as the length of wire is increased the curve becomes non-linear. This non-linear behavior is more prominent in the case when the length of wire is increased up to six fullerene cages significant rectification ratio (R.R) and negative differential resistance (NDR) comes into the picture. The excellent negative differential resistance ensures that a device with at least six molecular wires can be used as a tunnel diode. Graphic abstract

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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