Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)

2010 ◽  
Vol 97 (23) ◽  
pp. 232104 ◽  
Author(s):  
T. Jaouen ◽  
G. Jézéquel ◽  
G. Delhaye ◽  
B. Lépine ◽  
P. Turban ◽  
...  
Keyword(s):  
Work Function ◽  
Ionization Potential ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

About the determination of the Schottky barrier height with the C-V method

2011 ◽  
Vol 109 (7) ◽  
pp. 073714 ◽  
Author(s):  
V. G. Bozhkov ◽  
N. A. Torkhov ◽  
A. V. Shmargunov
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 923-926 ◽  
Author(s):  
Masataka Satoh ◽  
H. Matsuo
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Crystal Orientation ◽  
Schottky Barrier Height ◽  
Donor Concentration ◽  
Metal Contacts ◽  
Acceptor Concentration ◽  
Small Change ◽  
P Type

The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystal orientation and the defects on the surface of 3C-SiC.

Sign in / Sign up

Export Citation Format

Share Document