scholarly journals Limits for the vortex state spin torque oscillator in magnetic nanopillars: Micromagnetic simulations for a thin free layer

2010 ◽  
Vol 108 (12) ◽  
pp. 123914 ◽  
Author(s):  
Gloria R. Aranda ◽  
Julian M. Gonzalez ◽  
Juan J. del Val ◽  
Konstantin Y. Guslienko
2008 ◽  
Vol 78 (2) ◽  
Author(s):  
I. Firastrau ◽  
D. Gusakova ◽  
D. Houssameddine ◽  
U. Ebels ◽  
M.-C. Cyrille ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Alex. S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Samh Memshawy ◽  
Paolo Bortolotti ◽  
Vincent Cros ◽  
...  

AbstractNiFe-based vortex spin-torque nano-oscillators (STNO) have been shown to be rich dynamic systems which can operate as efficient frequency generators and detectors, but with a limitation in frequency determined by the gyrotropic frequency, typically sub-GHz. In this report, we present a detailed analysis of the nature of the higher order spin wave modes which exist in the Super High Frequency range (3–30 GHz). This is achieved via micromagnetic simulations and electrical characterisation in magnetic tunnel junctions, both directly via the spin-diode effect and indirectly via the measurement of the coupling with the gyrotropic critical current. The excitation mechanism and spatial profile of the modes are shown to have a complex dependence on the vortex core position. Additionally, the inter-mode coupling between the fundamental gyrotropic mode and the higher order modes is shown to reduce or enhance the effective damping depending upon the sense of propagation of the confined spin wave.


Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Alex S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Paulo P. Freitas ◽  
Ricardo Ferreira

Abstract We present an investigation into the in-plane field induced free layer state transitions found in magnetic tunnel junctions. By applying an ac current into an integrated field antenna, the magnetisation of the free layer can be switched between the magnetic vortex state and the quasi-uniform anti-parallel state. When in the magnetic vortex state, the vortex core gyrates a discrete number of times, and at certain frequencies there is a 50% chance of the core gyrating n or n − 1 times, leading to the proposal of a novel nanoscale continuous digital true random bit generator.


Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1013
Author(s):  
Herbert Weitensfelder ◽  
Hubert Brueckl ◽  
Armin Satz ◽  
Dieter Suess

The spin valve principle is the most prominent sensor design among giant- (GMR) and tunneling (TMR) magnetoresistive sensors. A new sensor concept with a disk shaped free layer enables the formation of a flux-closed vortex magnetization state if a certain relation of thickness to diameter is given. The low frequency noise of current-in-plane GMR sensing elements with different free layer thicknesses at different external field strengths has been measured. The measurements of the 1/f noise in external fields enabled a separation of magnetic and electric noise contributions. It has been shown that while the sensitivity is increasing with a decreasing element thickness, the pink noise contribution is increasing too. Still the detection limit at low frequencies is better in thinner free layer elements due to the higher sensitivity.


2014 ◽  
Vol 115 (17) ◽  
pp. 17C740 ◽  
Author(s):  
S. Tamaru ◽  
H. Kubota ◽  
K. Yakushiji ◽  
M. Konoto ◽  
T. Nozaki ◽  
...  

2009 ◽  
Vol 80 (5) ◽  
Author(s):  
R. Lehndorff ◽  
D. E. Bürgler ◽  
S. Gliga ◽  
R. Hertel ◽  
P. Grünberg ◽  
...  

Author(s):  
C. Murapaka ◽  
E. Jimenez ◽  
K. Merazzo-Jaimes ◽  
A. Ruiz-Calaforra ◽  
R. Ferreira ◽  
...  

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