Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

2010 ◽  
Vol 97 (22) ◽  
pp. 222902 ◽  
Author(s):  
Qi Xie ◽  
Jan Musschoot ◽  
Marc Schaekers ◽  
Matty Caymax ◽  
Annelies Delabie ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Plasma Pretreatment

Formation of Si:CP layer through in-situ doping and implantation process for n-type metal–oxide–semiconductor devices

2014 ◽  
Vol 557 ◽  
pp. 94-100 ◽  
Author(s):  
Shogo Mochizuki ◽  
Rainer Loesing ◽  
Zhengmao Zhu ◽  
Anthony G. Domenicucci ◽  
Philip L. Flaitz ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Implantation Process

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K
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