Reversible uptake of water on NaCl nanoparticles at relative humidity below deliquescence point observed by noncontact environmental atomic force microscopy

2011 ◽  
Vol 134 (4) ◽  
pp. 044702 ◽  
Author(s):  
Derek A. Bruzewicz ◽  
Antonio Checco ◽  
Benjamin M. Ocko ◽  
Ernie R. Lewis ◽  
Robert L. McGraw ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Force Microscopy ◽  
Atomic Force

Recovery dynamics of acrylic coating surfaces under elevated relative humidity monitored by atomic force microscopy

2020 ◽  
Vol 146 ◽  
pp. 105712
Author(s):  
Qi Chen ◽  
Mingwen Tian ◽  
Kristel de Vos ◽  
Maud Kastelijn ◽  
Ron A.H. Peters ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Force Microscopy ◽  
Acrylic Coating ◽  
Atomic Force ◽  
Recovery Dynamics

scholarly journals Adhesion of Polysilicon Microbeams in Controlled Humidity Ambients

1998 ◽  
Vol 518 ◽  
Author(s):  
M. P. de Boer ◽  
P. J. Clews ◽  
B. K. Smith ◽  
T. A. Michalske
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Oxygen Plasma ◽  
Rough Interface ◽  
Force Microscopy ◽  
Smooth Interface ◽  
Atomic Force ◽  
Adhesion Measurement ◽  
Exponential Trend

AbstractWe characterize in-situ the adhesion of surface micromachined polysilicon beams subject to controlled humidity ambients. Beams were freed by supercritical CO2drying. Consistent adhesion results were obtained using a post-treatment in an oxygen plasma which rendered the microbeams uniformly hydrophilic. Individual beam deformations were measured by optical interferometry after equilibration at a given relative humidity (RH). Validation of each adhesion measurement was accomplished by comparing the deformations with elasticity theory. The data indicates that adhesion increases exponentially with RH from 30% to 95%, with values from 1 mJ/m2 to 50 mJ/m2. Using the Kelvin equation, we show that the data should be independent of RH if a smooth interface is considered. By modeling a rough interface consistent with atomic force microscopy (AFM) data, the exponential trend is satisfactorily explained.

Fabrication of SiNWs-FET Nanostructure Via Atomic Force Microscopy Lithography

2020 ◽  
Vol 301 ◽  
pp. 103-110
Author(s):  
Nurain Najihah Alias ◽  
Khatijah Aisha Yaacob ◽  
Kuan Yew Cheong
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Silicon Nanowires ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor ◽  
P Type

The unique electrical properties of silicon nanowires (SiNWs) is one of the reasons it become an attractive transducer for biosensor nowadays. Positive (holes) and negative (electron) charge carriers from SiNWs can simply interact with either positive or negative charge of sensing target. In this paper, we have studied the fabrication of silicon nanowires field effect transistor (SiNWs-FET) nanostructure patterned on 15 Ω resistivity of p-type silicon on insulator (SOI) wafer fabricated via atomic force microscopy lithography technique. To fabricate SiNWs-FET nanostructure, a conductive AFM tip, Cr/Pt cantilever tip, was used then various value of applied voltage, writing speed and relative humidity were studied. Subsequent, followed by wet etching processes, admixture of tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) were used to remove the undesired of silicon layer and diluted hydrofluoric acid (HF) was used to remove the oxide layer. From the results, it shows that, cantilever tip at 9 V with 0.4 μm/s writing speed and relative humidity between 55% - 60% gives the best formation of silicon oxide to fabricate SiNWs-FET nanostructure.

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