Subband effective mass and mobility of two‐dimensional electrons in uniformly Si‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells
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2016 ◽
Vol 49
(9)
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pp. 095105
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1995 ◽
Vol 34
(Part 1, No. 5A)
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pp. 2241-2246
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1995 ◽
Vol 17
(2)
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pp. 129-133
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1996 ◽
Vol 35
(Part 1, No. 4A)
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pp. 2068-2072
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