Observation of excited states of graphene on Ni(111) by secondary electron spectroscopy

2010 ◽  
Vol 97 (22) ◽  
pp. 221909 ◽  
Author(s):  
P. Riccardi ◽  
A. Cupolillo ◽  
M. Pisarra ◽  
A. Sindona ◽  
L. S. Caputi
Keyword(s):  
Excited States ◽  
Electron Spectroscopy ◽  
Secondary Electron

Surface microscopy with scanned electron beams

1986 ◽  
Vol 318 (1541) ◽  
pp. 243-257 ◽  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Recent Work ◽  
Electron Spectroscopy ◽  
Secondary Electron ◽  
Electron Beams ◽  
Bulk Single Crystal ◽  
Future Developments ◽  
Surface Microscopy

A brief review is given of the methods that are available for studying surfaces on a microscope scale. The use of finely focused scanned electron beams is described in detail. Examples are given of Auger and secondary electron spectroscopy and microscopy, and of diffraction techniques. These examples are largely taken from recent work of the authors on Ag layers on bulk single-crystal Si (111), Si (100) and W (110) surfaces, but applications to other materials and to thin films are also discussed. Future developments are briefly outlined.

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

High Sensitivity Auger Spectroscopy

1986 ◽  
Vol 69 ◽  
Author(s):  
L. A. Larson
Keyword(s):  
Electron Beam ◽  
Background Subtraction ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
High Sensitivity ◽  
Auger Spectroscopy ◽  
High Dose ◽  
Auger Peak ◽  
Contamination Levels

AbstractThe technique of Auger Electron Spectroscopy has been investigated for the purposes of detecting contamination levels in high dose ion implants. Historically, Auger sensitivities have been considered to be on the order of 1%. This is due to the rather large secondary electron background and the various combinations of electron beam and detector noise that may occur. In this study, it is shown that the use of background subtraction and integration of the resulting EN(E) Auger peak will result in considerably better sensitivities for the case of ion implants in silicon.

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