Thermal stability of the OH–Li complex in hydrothermally grown single crystalline ZnO

2010 ◽  
Vol 97 (21) ◽  
pp. 211907 ◽  
Author(s):  
K. M. Johansen ◽  
H. Haug ◽  
E. Lund ◽  
E. V. Monakhov ◽  
B. G. Svensson
Keyword(s):  
Thermal Stability ◽  
Single Crystalline ◽  
Thermal Stability Of

Bonding and thermal stability of cysteine on single-crystalline iron oxide surfaces and Pt(111)

2020 ◽  
Vol 152 (6) ◽  
pp. 064701 ◽  
Author(s):  
Jasmin-Mathelda Abdou ◽  
Peter Seidel ◽  
Martin Sterrer
Keyword(s):  
Thermal Stability ◽  
Iron Oxide ◽  
Oxide Surfaces ◽  
Single Crystalline ◽  
Thermal Stability Of

Thermal Stability of Single-Crystalline IrO2(110) Layers: Spectroscopic and Adsorption Studies

2020 ◽  
Vol 124 (28) ◽  
pp. 15324-15336 ◽  
Author(s):  
Marcel J. S. Abb ◽  
Tim Weber ◽  
Daniel Langsdorf ◽  
Volkmar Koller ◽  
Sabrina M. Gericke ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystalline ◽  
Adsorption Studies ◽  
Thermal Stability Of

The chemistry and structural thermal stability of hole-doped single crystalline SnSe

2016 ◽  
Vol 688 ◽  
pp. 1088-1094 ◽  
Author(s):  
Bin Zhang ◽  
Kunling Peng ◽  
Ang Li ◽  
Xiaoyuan Zhou ◽  
Yanhui Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystalline ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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