Determination of insulator/semiconductor interface trap density by correlation deep level transient spectroscopy method

1992 ◽  
Vol 72 (9) ◽  
pp. 4125-4129 ◽  
Author(s):  
Xin Li ◽  
T. L. Tansley
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Trap Density ◽  
Spectroscopy Method ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Semiconductor Interface ◽  
Transient Spectroscopy

C-V AND DLTS CHARACTERIZATION OF RAPID THERMAL OXIDES ON Si0.887Ge0.113 AND Si0.8811Ge0.113C0.0059 ALLOYS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4207-4210 ◽  
Author(s):  
W. FENG ◽  
W. K. CHOI ◽  
L. K. BERA ◽  
J. MI ◽  
C. Y. YANG
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
High Temperature Oxidation ◽  
Oxidation Process ◽  
Deep Level ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Temperature Oxidation ◽  
Different Temperatures ◽  
Transient Spectroscopy

Capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) characterization was performed on rapid thermal oxides (RTO) on Si 0.887 Ge 0.113 and Si 0.8811 Ge 0.113 C 0.0059 alloys. A high interface trap density (~ 1012 eV -1 cm -2) and a high apparent doping level were obtained for the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples. The C-V results at different temperatures showed that the high apparent doping levels of the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

Bistable Defects Induced in GaAs by H2 Plasma Process

1989 ◽  
Vol 146 ◽  
Author(s):  
X. Boddaert ◽  
D. Vuillaume ◽  
D. Stievenard ◽  
J.C. Bourgoin ◽  
P. Boher
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Plasma Process ◽  
Stable States ◽  
Native Defects ◽  
Complete Determination ◽  
Lec Gaas ◽  
Transient Spectroscopy ◽  
Configuration Coordinate

ABSTRACTWe have studied the effect of an H2 plasma (150 W; 150°C; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy, we have shown that the plasma induces a main bistable defect DO, which has two possible stable states Dl and D2. A complete determination of the corresponding Configuration Coordinate Diagram has been done. Finally, no correlation has been obtained between DO and the native defects EL6, EL3 and EL2. No passivation of the EL2 defect has been observed and the evolution of the D0 concentration results from the association of hydrogen with AsGa. These observations are in disagreement with the identification of EL2 with an isolated AsGa.

Sign in / Sign up

Export Citation Format

Share Document