Current‐voltage characteristics of Na/p‐GaP(110) Schottky diodes

1992 ◽  
Vol 72 (9) ◽  
pp. 4486-4487 ◽  
Author(s):  
M. von der Emde ◽  
D. R. T. Zahn ◽  
Ch. Schultz ◽  
D. A. Evans ◽  
K. Horn
Keyword(s):  
Schottky Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

scholarly journals Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Çetinkaya ◽  
H. A. Çetinkara ◽  
F. Bayansal ◽  
S. Kahraman
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Sem Images ◽  
Gel Method ◽  
Sol Gel Method ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cbd Method ◽  
Xrd Techniques

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

2016 ◽  
Vol 121 ◽  
pp. 41-46 ◽  
Author(s):  
Tigran T. Mnatsakanov ◽  
Michael E. Levinshtein ◽  
Alexey G. Tandoev ◽  
Sergey N. Yurkov ◽  
John W. Palmour
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Current Voltage Characteristics
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