Excess entropy scaling of transport properties in network-forming ionic melts (SiO2 and BeF2)

2011 ◽  
Vol 134 (1) ◽  
pp. 014502 ◽  
Author(s):  
Manish Agarwal ◽  
Murari Singh ◽  
B. Shadrack Jabes ◽  
Charusita Chakravarty
Keyword(s):  
Transport Properties ◽  
Excess Entropy ◽  
Ionic Melts

Excess entropy scaling of transport properties of Lennard-Jones chains

2008 ◽  
Vol 129 (16) ◽  
pp. 164904 ◽  
Author(s):  
Teena Goel ◽  
Chandra Nath Patra ◽  
Tulsi Mukherjee ◽  
Charusita Chakravarty
Keyword(s):  
Transport Properties ◽  
Excess Entropy ◽  
Lennard Jones

Transport Properties of Tetrahedral, Network-Forming Ionic Melts

2009 ◽  
Vol 113 (46) ◽  
pp. 15284-15292 ◽  
Author(s):  
Manish Agarwal ◽  
Abir Ganguly ◽  
Charusita Chakravarty
Keyword(s):  
Transport Properties ◽  
Ionic Melts

Do Transport Properties of Entangled Linear Polymers Scale with Excess Entropy?

2013 ◽  
Vol 46 (21) ◽  
pp. 8710-8723 ◽  
Author(s):  
Evangelos Voyiatzis ◽  
Florian Müller-Plathe ◽  
Michael C. Böhm
Keyword(s):  
Transport Properties ◽  
Excess Entropy ◽  
Linear Polymers

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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