A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes

1992 ◽  
Vol 72 (10) ◽  
pp. 4739-4742 ◽  
Author(s):  
T. C. Lee ◽  
S. Fung ◽  
C. D. Beling ◽  
H. L. Au
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Systematic Approach ◽  
Series Resistance ◽  
Schottky Diodes

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor

2009 ◽  
Vol 609 ◽  
pp. 195-199
Author(s):  
A. Keffous ◽  
M. Kechouane ◽  
Tahar Kerdja ◽  
Y. Belkacem ◽  
K. Bourenane ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Gas Sensing ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Electrical Parameters ◽  
Porous Sic ◽  
Sic Films

In this paper we present the study of a Schottky diode gas sensing by using porous SiC films with palladium as a catalytic metal. The Schottky diodes were used for the first time for hydrocarbon (C2H6) gas sensing. The properties of the porous SiC films formed by electrochemical method were investigated by scanning electron microscopy (SEM). The electrical measurements were made at room temperature (295 K) in different ambient. The effect of the porous surface structure was investigated by evaluating electrical parameters such as the ideality factor (n), barrier height (Bp) and series resistance (Rs). The porous layer significantly affects the electrical properties of the Schottky diodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I–V characteristics was found to be dependent on the SiC thickness. For a thinner SiC layer (0.16 µm), the electrical parameters n was found around 1.135, 0.7041 eV for a barrier height and 45  for a series resistance, but for a thicker one (1.6 µm) n, Bp and Rs were 1.368, 0.7756 eV and 130 , respectively. The low value of the series resistance obtained using Cheung’s method clearly indicated the high performance of the Schottky diode for thinner SiC layer. This effect showed the uniformity of the SiC layer. Finally, sensitivity around 66 % and selectivity of the sensors were reached by using the PSC layer at low voltages below 0.5 Volt.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect

1996 ◽  
Vol 53 (1) ◽  
pp. 118-122 ◽  
Author(s):  
A Türüt ◽  
B Bati ◽  
A Kökçe ◽  
M Sağlam ◽  
N Yalçin
Keyword(s):  
Barrier Height ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias

On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes

1996 ◽  
Vol 39 (10) ◽  
pp. 1457-1462 ◽  
Author(s):  
M. Nathan ◽  
Z. Shoshani ◽  
G. Ashkinazi ◽  
B. Meyler ◽  
O. Zolotarevski
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
High Voltage ◽  
Ideality Factor ◽  
Schottky Diodes

Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

2012 ◽  
Vol 98 ◽  
pp. 6-11 ◽  
Author(s):  
Durmuş Ali Aldemir ◽  
Ali Kökce ◽  
Ahmet Faruk Özdemir
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Temperature Dependent

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

2010 ◽  
Vol 645-648 ◽  
pp. 1131-1134 ◽  
Author(s):  
Viorel Banu ◽  
Pierre Brosselard ◽  
Xavier Jordá ◽  
Phillippe Godignon ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Experimental Results ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Stable Voltage

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

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