Simplified closed‐form trap‐assisted tunneling model applied to nitrided oxide dielectric capacitors

1992 ◽  
Vol 72 (12) ◽  
pp. 5711-5715 ◽  
Author(s):  
S. Fleischer ◽  
P. T. Lai ◽  
Y. C. Cheng
Keyword(s):  
Closed Form ◽  
Tunneling Model ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Quantitative analysis of SILCs (stress-induced leakage currents) based on the inelastic trap-assisted tunneling model

1999 ◽  
Author(s):  
Shiro Kamohara ◽  
Yutaka Okuyama ◽  
Yukiko Manabe ◽  
Kosuke Okuyama ◽  
Katsuhiko Kubota ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Leakage Currents ◽  
Tunneling Model ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures

2014 ◽  
Vol 778-780 ◽  
pp. 718-721 ◽  
Author(s):  
Shota Nishida ◽  
Jian Bo Liang ◽  
Masashi Morimoto ◽  
Naoteru Shigekawa ◽  
Manabu Arai
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electrical Properties ◽  
Reverse Bias ◽  
Tunneling Model ◽  
Ambient Temperatures ◽  
Current Voltage ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Scanning Electron

The physical and electrical properties of p+-Si/n-4H-SiC and n+-Si/n-4H-SiC heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V) and breakdown characteristics measurements at raised ambient temperatures. The I-V characteristics for the reverse bias voltages of the two junctions were compared with the expectations based on Frenkel-Poole, and trap-assisted tunneling models. The results of calculations using the trap-assisted tunneling model were close to the measurements.

scholarly journals Compact Trap-Assisted-Tunneling Model for Line Tunneling Field-Effect-Transistor Devices

2020 ◽  
Vol 10 (13) ◽  
pp. 4475
Author(s):  
Faraz Najam ◽  
Yun Seop Yu
Keyword(s):  
Experimental Data ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Potential Profile ◽  
Relaxation Energy ◽  
Tunneling Model ◽  
Compact Formulation ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices. This work presents a compact formulation of the Schenk TAT model that is used to fit experimental drain-source current (Ids) versus gate-source voltage (Vgs) data of an L-shaped and line tunneling type TFET. The Schenk model incorporates material-dependent fundamental physical constants that play an important role in influencing the TAT generation (GTAT) including the lattice relaxation energy, Huang–Rhys factor, and the electro-optical frequency. This makes fitting any experimental data using the Schenk model physically relevant. The compact formulation of the Schenk TAT model involved solving the potential profile in the TFET and using that potential profile to calculate GTAT using the standard Schenk model. The GTAT was then approximated by the Gaussian distribution function for compact implementation. The model was compared against technology computer-aided design (TCAD) results and was found in reasonable agreement. The model was also used to fit an experimental device’s Ids–Vgs characteristics. The results, while not exactly fitting the experimental data, follow the general experimental Ids–Vgs trend reasonably well; the subthreshold slope was loosely similar to the experimental device. Additionally, the ON-current, especially to make a high drain-source bias model accurate, can be further improved by including effects such as electrostatic degradation and series resistance.

Resistive memory variability: A simplified trap-assisted tunneling model

2016 ◽  
Vol 115 ◽  
pp. 126-132 ◽  
Author(s):  
Daniele Garbin ◽  
Elisa Vianello ◽  
Quentin Rafhay ◽  
Mourad Azzaz ◽  
Philippe Candelier ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Tunneling Model ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current

2018 ◽  
Vol 924 ◽  
pp. 601-604 ◽  
Author(s):  
Gary Dolny ◽  
Yang Sheng ◽  
Yue Fu ◽  
S. Li ◽  
Rahul Radhakrishnan ◽  
...  
Keyword(s):  
Leakage Current ◽  
Thermionic Emission ◽  
Tunneling Model ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Wide Range ◽  
Trap Assisted Tunneling ◽  
Current Voltage Characteristics ◽  
Multi Level ◽  
Assisted Tunneling

The reverse-bias current-voltage characteristics of commercial 1200 V 4H-silicon-carbide junction barrier Schottky (SiC-JBS) rectifiers are studied both experimentally and through numerical simulation. The reverse leakage current measured from physical devices is observed to display both a strong temperature and field dependence. A model is presented to explain the observed behavior based on a combination of trap-assisted tunneling and a thermionic-emission mechanism through a potential barrier located at the metal-SiC interface. The study shows that a two-level trapping model can be necessary to properly explain the measured data. Excellent agreement between the models and the measurements is obtained over a wide range of bias and temperature.

A recombination- and trap-assisted tunneling model for stress-induced leakage current

2001 ◽  
Vol 45 (8) ◽  
pp. 1361-1369 ◽  
Author(s):  
Daniele Ielmini ◽  
Alessandro S. Spinelli ◽  
Andrea L. Lacaita ◽  
Andrea Martinelli ◽  
Gabriella Ghidini
Keyword(s):  
Leakage Current ◽  
Tunneling Model ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Stress Induced Leakage Current
Sign in / Sign up

Export Citation Format

Share Document