Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100)

1992 ◽  
Vol 72 (2) ◽  
pp. 631-637 ◽  
Author(s):  
S. Morley ◽  
D. R. T. Zahn ◽  
T. Eickhoff ◽  
W. Richter ◽  
D. A. Woolf ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Far Infrared ◽  
Gaas On Si ◽  
Infrared Measurements

Far-infrared measurements of Holstein processes and low-energyαtr2F(ω)structure inV3Si

1979 ◽  
Vol 19 (11) ◽  
pp. 5689-5693 ◽  
Author(s):  
S. W. McKnight ◽  
S. Perkowitz ◽  
D. B. Tanner ◽  
L. R. Testardi
Keyword(s):  
Far Infrared ◽  
Infrared Measurements

Astronomy on Ice

1986 ◽  
Vol 6 (4) ◽  
pp. 403-415 ◽  
Author(s):  
Martin A. Pomerantz
Keyword(s):  
Gamma Ray ◽  
Far Infrared ◽  
The United States ◽  
High Energy ◽  
Observational Cosmology ◽  
Significant Information ◽  
Infrared Measurements ◽  
Energy Gamma ◽  
Low Humidity ◽  
Scientific Station

AbstractThe geographic South Pole, where the United States maintains a year-round scientific station, affords a number of unique advantages for certain types of astronomical observations. These include: continuous viewing and constant declination of ail objects in the southern celestial hemisphere, exceedingly low humidity, extended periods of coronal seeing, high altitude, and uniform terrain. The areas of research that have already benefited immensely from thèse extraordinary features are helioseismology and submillimeter astronomy. Unparalleled observations of global solar oscillations have already yielded significant information about the structure and dynamics of the Sun’s interior. Far infrared measurements of various galactic and extra-galactic regions have attained an unprecedented level of sensitivity, limited for the first time only by the noise inherent in the detector. In addition to further helioseismological observations, currently planned future activities include observational cosmology and ultra high energy gamma ray astronomy.

scholarly journals Determination of confusion noise for far-infrared measurements

2005 ◽  
Vol 430 (1) ◽  
pp. 343-353 ◽  
Author(s):  
Cs. Kiss ◽  
U. Klaas ◽  
D. Lemke
Keyword(s):  
Far Infrared ◽  
Infrared Measurements

Behaviours of Background Carrier Concentration in MOCVD-Grown GaAs on Si*

2013 ◽  
Author(s):  
Jun Wang ◽  
Chan Deng ◽  
Gang Jiazhi ◽  
Yifan Wang ◽  
Qi Wang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Gaas On Si

Mid- and far-infrared measurements of sun glint from the sea surface

1992 ◽  
Author(s):  
Alfred W. Cooper ◽  
Eugene C. Crittenden, Jr. ◽  
Edmund A. Milne ◽  
Philip L. Walker ◽  
E. Moss ◽  
...  
Keyword(s):  
Far Infrared ◽  
Sea Surface ◽  
Infrared Measurements

Far infrared spectra of amorphous-Si:H thin films on polyethylene

1983 ◽  
Vol 61 (2) ◽  
pp. 305-308
Author(s):  
M. S. Mathur ◽  
H. C. Card ◽  
K. C. Kao ◽  
S. R. Mejia ◽  
G. C. Tabisz
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Far Infrared ◽  
Substrate Material ◽  
Absorption Bands ◽  
Silicon Thin Films ◽  
Infrared Measurements ◽  
Hydrogenated Amorphous

Hydrogenated amorphous-silicon thin films (a-Si:H) were deposited by microwave plasma chemical-vapour decomposition of SiH4, on thin polyethylene sheets. The high-resolution, far infrared measurements were performed on these films in the 700–50 cm−1 region on a Nicolet far infrared interferometer. The use of polyethylene as the substrate material permitted the determination of the absorption bands at 656.4, 652, 639.4, and 543 cm−1 with a shoulder at 539 cm−1 and a broad feature at 70.8 cm−1. These features provided evidence for SiH, SiH2 (as predicted by Lucovsky et al.), and SiH3 combinations in the film, as well as far more complex systems.

Far infrared measurements of selected optical materials at 1.6°K

1975 ◽  
Vol 15 (1) ◽  
pp. 45-49 ◽  
Author(s):  
J.A. Alvarez ◽  
R.E. Jennings ◽  
A.F.M. Moorwood
Keyword(s):  
Optical Materials ◽  
Far Infrared ◽  
Infrared Measurements
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