Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC∕Si Epiwafers Through X-Ray Diffraction Analyses

2010 ◽  
Author(s):  
M. Zielinski ◽  
S. Jiao ◽  
T. Chassagne ◽  
A. Michon ◽  
M. Nemoz ◽  
...  
Keyword(s):  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray

Effects of Low-Temperature Grown GaAs Intermediate Layers on the Crystalline Quality of GaAs-on-Si Epilayers

1994 ◽  
Vol 340 ◽  
Author(s):  
T.C. Chong ◽  
C.C. Phua ◽  
W.S. Lau ◽  
L.S. Tan
Keyword(s):  
Low Temperature ◽  
Deep Level ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
X Ray ◽  
Peak Intensity ◽  
Intermediate Layers ◽  
Lt Gaas

ABSTRACTThe incorporation of low-temperature (LT) GaAs intermediate layers grown at 230°C had been shown to have the effects of improving the crystalline quality of GaAs epilayers on Si. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and reduced the GaAs (004) X-ray diffraction full width at half maximum (FWHM) by 59 arcsecs. The PL results were subsequently confirmed by cathodoluminescence images. The dominant deep level electron trap in the LT-GaAs epilayer grown on Si substrate was the same as that found in LT-GaAs epilayer grown on GaAs substrate.

Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing

2012 ◽  
Vol 725 ◽  
pp. 273-276
Author(s):  
Motoki Takahara ◽  
Suguru Funasaki ◽  
Jyun Kudou ◽  
Isao Tsunoda ◽  
Kenichiro Takakura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Crystalline Quality ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Before And After ◽  
Si Doped ◽  
Scanning Electron

For the purpose of improving the crystalline quality of undoped and Si doped β-Ga2O3 films, high temperature annealing at 900°C was performed. The crystalline quality of the films investigated using scanning electron microscopy and X-ray diffraction. Also the conductivity of the films is compared before and after the annealing. After the 900°C annealing, the XRD peaks intensity corresponding to β-Ga2O3 is increased. This result indicates that the crystalline quality improves by the high temperature annealing.

Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution

2005 ◽  
Vol 483-485 ◽  
pp. 13-16 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Y. Ueda ◽  
S. Naga ◽  
Y. Ito ◽  
...  
Keyword(s):  
Grown Crystal ◽  
Seed Crystal ◽  
Solution Growth ◽  
Crystalline Quality ◽  
Ternary Solution ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Koh Etching

The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm􀊷28mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray 􀐢-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that the crystalline quality of grown crystal was significantly improved during the solution growth.

High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 22 (3) ◽  
pp. 219-222
Author(s):  
W. J. Wang ◽  
K. Sugita ◽  
Y. Nagai ◽  
Y. Houchin ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Reflection

The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of InN film by MOVPE is discussed.

scholarly journals X-ray diffraction analysis of kaolin M1 and M2 via the Williamson–Hall and Warren–Averbach methods

2021 ◽  
pp. 174751982098472
Author(s):  
Lalmi Khier ◽  
Lakel Abdelghani ◽  
Belahssen Okba ◽  
Djamel Maouche ◽  
Lakel Said
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Low Temperature ◽  
Diffraction Analysis ◽  
Mechanical Resistance ◽  
X Ray Diffraction ◽  
Integral Breadth ◽  
X Ray ◽  
Mullite Phase

Kaolin M1 and M2 studied by X-ray diffraction focus on the mullite phase, which is the main phase present in both products. The Williamson–Hall and Warren–Averbach methods for determining the crystallite size and microstrains of integral breadth β are calculated by the FullProf program. The integral breadth ( β) is a mixture resulting from the microstrains and size effect, so this should be taken into account during the calculation. The Williamson–Hall chart determines whether the sample is affected by grain size or microstrain. It appears very clearly that the principal phase of the various sintered kaolins, mullite, is free from internal microstrains. It is the case of the mixtures fritted at low temperature (1200 °C) during 1 h and also the case of the mixtures of the type chamotte cooks with 1350 °C during very long times (several weeks). This result is very significant as it gives an element of explanation to a very significant quality of mullite: its mechanical resistance during uses at high temperature remains.

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