The negative differential resistance behavior in delta‐doped GaAs structure due to resonant interband tunneling

1992 ◽  
Vol 71 (2) ◽  
pp. 780-782 ◽  
Author(s):  
M. P. Houng ◽  
Y. H. Wang ◽  
H. H. Chen ◽  
H. C. Wei ◽  
Y. H. Lee
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Interband Tunneling ◽  
Gaas Structure

Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4701-4706 ◽  
Author(s):  
Tiaoyang Li ◽  
Xuefei Li ◽  
Mengchuan Tian ◽  
Qianlan Hu ◽  
Xin Wang ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Black Phosphorus ◽  
Band Alignment ◽  
Narrow Bandgap ◽  
Interband Tunneling ◽  
Broken Gap

We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n−-GaAs/n-In0.2Ga0.8As/i-GaAs structure

1996 ◽  
Vol 20 (1) ◽  
pp. 7-13
Author(s):  
Lih-Wen Laih ◽  
Wen-Chau Liu ◽  
Jung-Hu Tsai ◽  
Wei-Chou Hsu ◽  
Yuan-Tzu Ting ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Gaas Structure

scholarly journals New negative differential resistance device based on resonant interband tunneling

1989 ◽  
Vol 55 (11) ◽  
pp. 1094-1096 ◽  
Author(s):  
J. R. Söderström ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Interband Tunneling

Resonant interband tunneling device with multiple negative differential resistance regions

1990 ◽  
Vol 11 (3) ◽  
pp. 110-112 ◽  
Author(s):  
R. Beresford ◽  
L.F. Luo ◽  
K.F. Longenbach ◽  
W.I. Wang
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Interband Tunneling

Negative differential resistance due to resonant interband tunneling of holes

1990 ◽  
Vol 68 (7) ◽  
pp. 3744-3746 ◽  
Author(s):  
D. H. Chow ◽  
E. T. Yu ◽  
J. R. Söderström ◽  
D. Z.‐Y. Ting ◽  
T. C. McGill
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Interband Tunneling
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