Relationship between interfacial native oxide thickness and bonding temperature in directly bonded silicon wafer pairs

1992 ◽  
Vol 71 (3) ◽  
pp. 1237-1241 ◽  
Author(s):  
L. Ling ◽  
F. Shimura
Keyword(s):  
Silicon Wafer ◽  
Bonding Temperature ◽  
Oxide Thickness ◽  
Native Oxide

The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Ishimaru ◽  
M. Yoshiki ◽  
T. Hatanaka
Keyword(s):  
Silicon Wafer ◽  
Silicon Surface ◽  
Dopant Concentration ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Wafer Surface ◽  
Oxide Growth ◽  
X Ray ◽  
Silicon Bulk ◽  
P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

FABRICATION OF SELF-ORGANIZED METAL NANOWIRE ARRAY USING POROUS ALUMINA TEMPLATE FOR OFF-CHIP INTERCONNECTS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 453-458 ◽  
Author(s):  
S. BALAKRISHNAN ◽  
V. KRIPESH ◽  
SER CHOONG CHONG
Keyword(s):  
Silicon Wafer ◽  
Porous Alumina ◽  
Nanowire Array ◽  
Oxalic Acid Solution ◽  
Aluminum Film ◽  
Native Oxide ◽  
Alumina Template ◽  
Nanoporous Alumina ◽  
Self Organized ◽  
Nickel Nanowire

Porous anodic alumina formation on silicon substrate is an example of a nanostructured porous array that is well-suited as a template for growing metallic nanowires. Commercial silicon wafer deposited with aluminum is used as substrate. Prior to anodization, the aluminum film is cleaned with mixture of acids solution to remove its native oxide growth. Anodization of aluminum film on silicon wafer is performed in oxalic acid solution to generate uniform and self-organized nanoporous alumina film. The pores are in the range of 60 nm diameter and pore density is about 9 × 109/ cm 2. The nanoporous alumina template is filled with nickel nanowires by wet electrodeposition process. After nanowire is grown on silicon wafer, the alumina template is etched and the as grown nickel nanowire forest is patterned using laser pruning method. The crystallinity pattern of the as grown nickel naowire forest is characterized using X-ray diffraction technique.

scholarly journals MEASUREMENT OF SILICON NATIVE OXIDE THICKNESS BY XPS

1991 ◽  
Vol 7 (Supple) ◽  
pp. 333-334
Author(s):  
YOKO TAKEUCHI ◽  
MICHIHIKO INABA
Keyword(s):  
Oxide Thickness ◽  
Native Oxide

Limiting Native Oxide Regrowth for High-k Gate Dielectrics

2003 ◽  
Vol 765 ◽  
Author(s):  
K. Choi ◽  
H. Harris ◽  
S. Gangopadhyay ◽  
H. Temkin
Keyword(s):  
Silicon Oxide ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Hafnium Dioxide ◽  
Electron Beam Evaporation ◽  
Native Oxide ◽  
Device Applications ◽  
The Difference ◽  
Cleaning Methods

AbstractA cleaning process resulting in atomically smooth, hydrogen-terminated, silicon surface that would inhibit formation of native silicon oxide is needed for high-k gate dielectric deposition. Various cleaning methods thus need to be tested in terms of resistance to native oxide formation. Native oxide re-growth is studied as a function of exposure time to atmospheric ambient using ellipsometry. Hafnium dioxide film (k ~23) is deposited on the as-cleaned substrates by electron beam evaporation and subsequently annealed in hydrogen. The difference in the effective oxide thickness re-grown on surfaces treated with the conventional RCA and modified Shiraki cleaning methods, after one-hour exposure, can be as large as 2 Å. This is significant in device applications demanding equivalent oxide thickness less than 20 Å. The degree of hydrogen passivation, surface micro-roughness and organic removal capability are considered to be the main factors that explain the differences between the cleaning methods. Data derived from capacitance-voltage analysis of test capacitors verified the trend observed in the native oxide thickness measurements. An increase of 10~15 % in accumulation capacitance is observed in the samples treated by the new cleaning method.

Effect of Doping on Nanowire Morphology during Plasma-assisted Chemical Vapor Deposition

2012 ◽  
Vol 1439 ◽  
pp. 25-31
Author(s):  
Andrew J. Lohn ◽  
Kate J. Norris ◽  
Robert D. Cormia ◽  
Elane Coleman ◽  
Gary S. Tompa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carrier Concentration ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Radial Growth ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Doping Condition ◽  
Axial Growth

ABSTRACTMorphologies of silicon nanowires grown by plasma-assisted metalorganic chemical vapor deposition were studied in the presence of various dopant precursors. The varied precursors affected the axial and radial growth rates over orders of magnitude where triethylborane showed the strongest enhancements for both axial and radial growth, and triethylarsenic and triethylantimony retarded axial growth. Native oxide thickness is also shown to depend strongly on doping condition resulting in increased oxide thicknesses for increased carrier concentration, using shifts in the measured binding energy of the silicon 2p3/2 state as a proxy for carrier concentration.

An Investigation of the Native Oxide of Aluminum Alloy 7475-T7651 Using XPS, AES, TEM, EELS, GDOES and RBS

2003 ◽  
Vol 10 (02n03) ◽  
pp. 365-371 ◽  
Author(s):  
S. K. Toh ◽  
D. G. McCulloch ◽  
J. Du Plessis ◽  
P. J. K. Paterson ◽  
A. E. Hughes ◽  
...  
Keyword(s):  
Aluminum Alloy ◽  
Oxide Layer ◽  
Optical Emission ◽  
Oxide Thickness ◽  
Rolling Process ◽  
Thickness Measurement ◽  
Native Oxide ◽  
Emission Spectrometry ◽  
Native Oxide Layer ◽  
Cross Sectional

The native oxide on the rolled aerospace aluminum alloy 7475-T7651 was characterized using a variety of different techniques, including X-ray Photoelectron Spectrometry (XPS), Auger Electron Spectrometry (AES), Transmission Electron Microscopy (TEM), Electron Energy Loss Spectrometry (EELS), Glow Discharge Optical Emission Spectrometry (GDOES), and Rutherford Backscattered Spectrometry (RBS). All techniques revealed that the native oxide layer is magnesium-rich and is probably a mixture of magnesium and aluminum–magnesium oxides.1 The oxide layer was found to be of nonuniform thickness due to the rolling process involved during the manufacture of this sheet alloy; this complicates analysis using techniques which have poor spatial resolution. Direct thickness measurement from cross-sectional TEM reveals an oxide thickness which varies between 125 and 500 nm. This large variation in thickness was also evident from GDOES and AES depth profiles as well as the RBS data. Both XPS and RBS also show evidence for the presence of heavy metals in the oxide.

Removal of Metallic Contaminants and Native Oxide from Silicon Wafer Surface by Pure Water Containing a Little Dissolved Oxygen

1995 ◽  
Vol 386 ◽  
Author(s):  
Yuka Hayami ◽  
Miki T. Suzuki ◽  
Yoshiko Okui ◽  
Hiroki Ogawa ◽  
Shuzo Fujimura
Keyword(s):  
Dissolved Oxygen ◽  
Silicon Wafer ◽  
Pure Water ◽  
Treatment Temperature ◽  
Native Oxide ◽  
Wafer Surface ◽  
Metal Contaminants ◽  
Silicon Wafer Surface ◽  
Metallic Contaminants ◽  
Ft Ir

ABSTRACTCleaning effects of pure water containing dissolved oxygen of very low concentration (LDO water) to metallic contaminants on silicon wafer surface were confirmed. To maintain the concentration of the dissolved oxygen in water, experiments were performed in a glove box in which ambience was controlled so as to satisfy Henry's law between the water and the ambient gas. In the experiment using intensionally contaminated wafers, residual metal contaminants except copper on Si-surface decreased from 1014 atoms/cm2 to 1011 atoms/cm2 after the 1ppb hot LDO treatment at boiling point. This effect depended on the concentration of dissolve oxygen, treatment temperature, and rinsing time. Contact angle of the wafer surface increased gradually from about 10 [deg] with decrease in the residual metals and jumped up to about 90 [deg]. when the amount of residual metals reached to minimum. Then absorption peak of Si-O bonds in FT-IR-RAS spectra also disappeared. These results therefore show that hot LDO water removed metal contaminants from the wafer surface with etching of the native oxide.

Characterization of HF Treated (100) Si Surfaces by Surface Charge Analysis (SCA)

1992 ◽  
Vol 259 ◽  
Author(s):  
Jon T. Fitch
Keyword(s):  
Electrical Properties ◽  
Surface Charge ◽  
Chemical Bonding ◽  
Oxide Thickness ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Charge Analysis ◽  
The Stability ◽  
Over Time

ABSTRACTSurface Charge Analysis (SCA), and ellipsometry have been used to study the stability over time of HF treated (100) silicon surfaces as a function of the post-HF rinse time. Using SCA, the electrical properties of the chemical terminating layer of these silicon surfaces were measured. The surfaces which remained native oxide free the longest (−10 hours) had very low Qox and Dit values on the order of 1.0 × 1011/cm2 and 5.0 × 1010 eV−lcm−2, respectively. A good correlation was found between Dit and the native oxide thickness measured by ellipsometry. This and other results are discussed in terms of the chemical bonding on the silicon surfaces.

Photo-excited removal of native oxide on a silicon wafer in NF3 gas using a VUV Xe lamp

1994 ◽  
Vol 79-80 ◽  
pp. 117-121 ◽  
Author(s):  
Tatsuru Shirafuji ◽  
Kunihide Tachibana
Keyword(s):  
Silicon Wafer ◽  
Native Oxide

Mechanisms of Low-Temperature Ti/Si-Based Wafer Bonding

2005 ◽  
Vol 863 ◽  
Author(s):  
Jian Yu ◽  
Yinmin Wang ◽  
Arthur W. Haberl ◽  
Hassa Bakhru ◽  
Jian-Qiang Lu ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Wafer Bonding ◽  
Rutherford Backscattering Spectrometry ◽  
Three Dimensional ◽  
Amorphous Layer ◽  
Bonding Interface ◽  
Native Oxide ◽  
Wafer Level ◽  
Transmission Electron ◽  
Strong Adhesion

AbstractThree-dimensional (3D) wafer-level integration is receiving increased attention with various wafer bonding approaches being evaluated. Recently, we explored an alternative lowtemperature Ti/Si-based wafer bonding, in which an oxidized silicon wafer was successfully bonded with a prime silicon wafer at 400°C using 30 nm sputtered Ti as adhesive. The bonded pairs show excellent bonding uniformity and mechanical integrity. Rutherford backscattering spectrometry (RBS) was applied to confirm the interdiffusion occurred in the interlayer. The bonding interface was examined by high-resolution transmission electron microscopy (HRTEM) assisted with electron energy loss spectroscopy (EELS) elemental mapping and energy dispersive X-ray spectroscopy (EDX). Characterization of the bonding interface indicates the strong adhesion achieved is attributed to an amorphous layer formed by interdiffusion of Si and oxygen into Ti interlayer and the unique ability to reduce native oxide (SiO2) by Ti even at low temperatures.

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