Electrical characteristics of Au and Ag Schottky contacts on Nb-1.0 wt %-doped SrTiO3

2010 ◽  
Vol 108 (10) ◽  
pp. 104506 ◽  
Author(s):  
Yimin Cui ◽  
Sheng Yin ◽  
Dandan Wang ◽  
Guozhong Xing ◽  
SengHwee Leng ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Electrical Characteristics

Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L351-L353 ◽  
Author(s):  
Subramaniam Arulkumaran ◽  
Takashi Egawa ◽  
Guang-Yuan Zhao ◽  
Hiroyasu Ishikawa ◽  
Takashi Jimbo ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Electrical Characteristics

Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MA05 ◽  
Author(s):  
Seongjun Kim ◽  
Hee Jin Kim ◽  
Suk Choi ◽  
Jae-Hyun Ryou ◽  
Russell D. Dupuis ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Electrical Characteristics

Electrical characteristics of ion bombarded Ni/n-Si Schottky contacts

1989 ◽  
Vol 43 (1-4) ◽  
pp. 242-247 ◽  
Author(s):  
G. Myburg ◽  
J.B. Malherbe ◽  
E. Friedland
Keyword(s):  
Schottky Contacts ◽  
Electrical Characteristics

Electrical characteristics of N-polar $(000\bar{1})$ p-type GaN Schottky contacts

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ09 ◽  
Author(s):  
Toshichika Aoki ◽  
Tomoyuki Tanikawa ◽  
Ryuji Katayama ◽  
Takashi Matsuoka ◽  
Kenji Shiojima
Keyword(s):  
Schottky Contacts ◽  
Electrical Characteristics ◽  
P Type

Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 577-580 ◽  
Author(s):  
Irina P. Nikitina ◽  
Konstantin Vassilevski ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Nickel Silicide ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Adhesion Layer ◽  
Temperature Range ◽  
Barrier Heights ◽  
Phase Inhomogeneity ◽  
Layer 4 ◽  
State Chemical ◽  
Nisi Phase

Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures from 600 to 750 °C. It was found that contacts with barrier heights of 1.45 eV, consisting mainly of NiSi phase, formed in the 600-660 °C temperature range, while annealing at around 750 °C led to the formation of Ni2Si phase with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman mapping. It was concluded that the thermodynamically unfavourable NiSi phase appeared in the 600-660 °C temperature range due to the fact that the solid state chemical reaction between Ni and SiC at these temperatures is controlled by nickel diffusion through the titanium barrier.

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