The influence of ammonia on rapid‐thermal low‐pressure metalorganic chemical vapor deposited TiNxfilms from tetrakis (dimethylamido) titanium precursor onto InP

1992 ◽  
Vol 71 (2) ◽  
pp. 993-1000 ◽  
Author(s):  
A. Katz ◽  
A. Feingold ◽  
S. Nakahara ◽  
S. J. Pearton ◽  
E. Lane ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Metalorganic chemical vapor deposited buffer layer in metal–ferroelectric–insulator–semiconductor diodes

2009 ◽  
Vol 149 (45-46) ◽  
pp. 2013-2016 ◽  
Author(s):  
R. Thomas ◽  
R.E. Melgarejo ◽  
N.M. Murari ◽  
S.P. Pavunny ◽  
R.S. Katiyar
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical
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