Electrical activation of group‐IV elements implanted at MeV energies in InP

1992 ◽  
Vol 71 (4) ◽  
pp. 1708-1712 ◽  
Author(s):  
M. C. Ridgway ◽  
C. Jagadish ◽  
T. D. Thompson ◽  
S. T. Johnson
Keyword(s):  
Group Iv ◽  
Electrical Activation ◽  
Group Iv Elements

Rapid Thermal Annealing of InP Implanted with Group IV Eleients

1993 ◽  
Vol 300 ◽  
Author(s):  
M.C. Ridgway ◽  
P Kringhoj
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Group Iv ◽  
Electrical Activation ◽  
Temperature Range ◽  
Group Iv Elements

ABSTRACTElectrical activation and carrier mobility have been studied as a function of ion dose and annealing temperature for InP implanted with Group IV elements (Si, Ge and Sn). In general, electrical activation increases with decreasing ion dose and/or increasing annealing temperature. Si and Sn exhibit comparable activation and mobility, superior to that of Ge, over the ion dose and temperature range examined. The relative influences of implantation-induced non-stoichiometry and the amphoteric behaviour of the group IV elements have been investigated. For the latter, the amphoteric behavior of Ge > Si > Sn.

The Influence of Non-Stoichiometry on the Electrical Activation of n-Type Dopants in InP

1995 ◽  
Vol 378 ◽  
Author(s):  
M. C. Ridgway ◽  
C. M. Johnson ◽  
P. KringhØj
Keyword(s):  
Depth Distribution ◽  
Analytical Techniques ◽  
Group Iv ◽  
Relative Influence ◽  
Electrical Activation ◽  
Electrical Measurements ◽  
Group Vi ◽  
Defect Complexes ◽  
Group Ii ◽  
Group Iv Elements

AbstractThe influence of implantation-induced non-stoichiometry on the electrical activation and depth distribution of Group IV (Ge and Sn) and VI (Se and Te) elements in InP has been investigated with a variety of analytical techniques. Electrical measurements indicate that P co-implantation can increase the electrical activation of the Group IV elements through reductions in amphoteric behaviour and dopant-defect complexes for Ge and Sn, respectively. The relative influence of P co-implantation increases as the dopant ion dose increases. Though others have demonstrated that co-implantation increases the electrical activation of Group II elements, similar observations were not apparent for Group VI elements, the latter attributed to the lack of Group VI element interstitial character.

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

Ionization potentials of non-metal monosulfides. Conjugation in radical cations containing Group IV elements

1990 ◽  
Vol 49 (1) ◽  
pp. 26-32 ◽  
Author(s):  
A. N. Egorochkin ◽  
M. G. Voronkov ◽  
S. E. Skobeleva ◽  
T. G. Mushtina ◽  
O. V. Zderenova
Keyword(s):  
Radical Cations ◽  
Group Iv ◽  
Ionization Potentials ◽  
Group Iv Elements

Pentafluorophenyl organometallic compounds of group IV elements

1965 ◽  
Vol 4 (6) ◽  
pp. 446-454 ◽  
Author(s):  
Christ Tamborski ◽  
Edward J. Soloski ◽  
Stanley M. Dec
Keyword(s):  
Organometallic Compounds ◽  
Group Iv ◽  
Group Iv Elements

New insecticides by replacement of carbon by other Group IV elements

1990 ◽  
Vol 29 (2) ◽  
pp. 215-225 ◽  
Author(s):  
Scott McN. Sieburth ◽  
Sarah Y. Lin ◽  
Thomas G. Cullen
Keyword(s):  
Group Iv ◽  
Group Iv Elements
Sign in / Sign up

Export Citation Format

Share Document