Channeling effects for silicon implantation into large‐diameter gallium arsenide substrates

1992 ◽  
Vol 71 (5) ◽  
pp. 2441-2448 ◽  
Author(s):  
R. B. Simonton ◽  
D. H. Rosenblatt ◽  
E. Corcoran ◽  
D. Kamenitsa
Keyword(s):  
Gallium Arsenide ◽  
Large Diameter ◽  
Silicon Implantation

Effects of thermal annealing on the electrical properties of large diameter semi-insulating gallium arsenide

2009 ◽  
Vol 475 (1-2) ◽  
pp. 923-925 ◽  
Author(s):  
Hongyan Liu ◽  
Weizhong Sun ◽  
Qiuyan Hao ◽  
Haiyun Wang ◽  
Caichi Liu
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Large Diameter

The cell structures in the large diameter semi-insulating gallium arsenide single crystal

2006 ◽  
Vol 9 (1-3) ◽  
pp. 399-402 ◽  
Author(s):  
Weizhong Sun ◽  
Qiuyan Hao ◽  
Haiyun Wang ◽  
Caichi Liu ◽  
Yuesheng Xu ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Single Crystal ◽  
Large Diameter ◽  
Cell Structures

Distribution of Carbon in Large Diameter Semi-Insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski Technique

2012 ◽  
Vol 472-475 ◽  
pp. 587-590
Author(s):  
Li Hua Wang ◽  
Qiu Yan Hao ◽  
Bing Zhang Wang ◽  
Wei Zhong Sun ◽  
Cai Chi Liu
Keyword(s):  
Gallium Arsenide ◽  
Dislocation Density ◽  
Strain Field ◽  
Elastic Strain ◽  
Radial Direction ◽  
Large Diameter ◽  
Czochralski Technique ◽  
Carbon Impurity ◽  
Distribution Of Dislocations ◽  
Elastic Strain Field

Carbon impurity concentration and dislocation density were investigated with optical microscopy and Fourier transform infrared absorption spectrometer in radial direction of large diameter (6-inch) undoped semi-insulating Gallium Arsenide (SI-GaAs) grown by liquid encapsulated Czochralski (LEC). The experimental results showed that their distributions are both “W”-shaped along wafer diameter, which is relatively higher on the center and lower near the center, but highest on the edge of the wafer. The nonuniformity distribution of thermal stress from growth process leads to the “W”-shaped distribution of dislocations in radial direction. The adsorption of matrix elastic strain field around dislocations induces the “W”-shaped distribution of carbon impurity. Dislocations adsorb carbon impurity and carbon impurity decorates dislocations. Dislocation density distribution affects carbon behavior.

Development of a digital SEM

1991 ◽  
Vol 49 ◽  
pp. 358-359
Author(s):  
A. Yamada ◽  
A. Shibano ◽  
K. Harasawa ◽  
T. Kobayashi ◽  
H. Fukuda ◽  
...  
Keyword(s):  
Large Diameter ◽  
Objective Lens ◽  
Large Specimen ◽  
Backscattered Electrons ◽  
Digital Scanning ◽  
Junction Type ◽  
High Resolution Images ◽  
Working Distance ◽  
Type Detector ◽  
Short Working

A newly developed digital scanning electron microscope, the JSM-6300, has the following features: Equipped with a narrower conical objective lens (OL), it allows high resolution images to be obtained easily at a short working distance (WD) and a large specimen tilt angle. In addition, it is provided with automatic functions and digital image processing functions for ease of operation.Conical C-F lens: The newly developed conical C-F objective lens, having low aberration characteristics over a wide WD range, allows a large-diameter (3-inch) specimen to be tilted up to 60° at short WD, and provides images with low magnifications starting at 10*. On the bottom of the lens, a p n junction type detector is provided to detect backscattered electrons (BE) from the specimen. As the narrower conical 0L increases the secondary electron (SE) detector's field intensity on the specimen surface, high SE image quality is obtained.

CALCULATION OF STAGES OF THE TECHNOLOGICAL PROCESS OF MANUFACTURE OF PPD DETECTORS USING COMPUTER MATHEMATICAL MODELING AND PRODUCTION OF ALPHA RADIOMETER ON THEIR BASIS

2020 ◽  
Vol 7 (2) ◽  
pp. 21-28
Author(s):  
SALI RADZHAPOV ◽  
◽  
RUSTAM RAKHIMOV ◽  
BEGJAN RADZHAPOV ◽  
MARS ZUFAROV
Keyword(s):  
Mathematical Modeling ◽  
Technological Process ◽  
Block Diagram ◽  
Large Diameter ◽  
Silicon Detector ◽  
Digital Processing ◽  
Main Element ◽  
Alpha Radiation ◽  
Initial Silicon ◽  
Natural Isotopes

The article describes the developed radiometer for Express measurement of alpha radiation of radioactive elements based on a large-diameter silicon detector. The main element of the PPD detector is made using computer mathematical modeling of all stages of the technological process of manufacturing detectors, taking into account at each stage the degree of influence of the properties of the initial silicon on the electrophysical and radiometric characteristics of the detector. Detectors are manufactured for certain types of devices. The developed radiometer is designed to measure alpha radiation of natural isotopes (238U, 234U, 232Th, 226Ra, 222Rn, 218Po, 214Bi, etc.) in various environments. It also shows the principle of operation of the device, provides a block diagram of the measuring complex, describes the electronic components of the radiometer, as well as the block diagram. Signal transformations (spectrum transfer, filtering, accumulation) are implemented programmatically on the basis of a digital processing module. The device can detect the presence of specific elements in various environments, as well as protect people from the harmful effects of adverse radiation and can be used both in the field and stationary.

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