Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy

1992 ◽  
Vol 71 (6) ◽  
pp. 2679-2701 ◽  
Author(s):  
A. Georgakilas ◽  
P. Panayotatos ◽  
J. Stoemenos ◽  
J.‐L. Mourrain ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Films

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

1991 ◽  
Vol 8 (3) ◽  
pp. 149-152
Author(s):  
Xiao Guangming ◽  
Yin Shiduan ◽  
Zhang Jingping ◽  
Ding Aiju ◽  
Dong Aihua ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Implantation Energy ◽  
Si Substrates ◽  
Gaas Films

Tin‐doping effects in GaAs films grown by molecular beam epitaxy

1978 ◽  
Vol 49 (9) ◽  
pp. 4854-4861 ◽  
Author(s):  
C. E. C. Wood ◽  
B. A. Joyce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Doping Effects ◽  
Gaas Films

Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations

1999 ◽  
Vol 44 (7) ◽  
pp. 801-803 ◽  
Author(s):  
G. B. Galiev ◽  
V. G. Mokerov ◽  
Yu. V. Slepnev ◽  
Yu. V. Khabarov ◽  
A. A. Lomov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Gaas Films

Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 32 (4) ◽  
pp. 418-425 ◽  
Author(s):  
Takashi Yoshioka ◽  
Satoru Takatori ◽  
Pham Hong Minh ◽  
Marilou Cadatal-Raduban ◽  
Tomoharu Nakazato ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Terahertz Emission ◽  
Gaas Films

Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 579-580 ◽  
Author(s):  
Guolin Yu ◽  
Hiroshi Ebisu ◽  
Md. Mosaddeq ur Rahman ◽  
Tetsuo Soga ◽  
Takashi Jimbo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrate ◽  
Structural Comparison ◽  
Gaas Films

The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy

1987 ◽  
Vol 26 (Part 2, No. 3) ◽  
pp. L173-L175 ◽  
Author(s):  
Hitoshi Kawanami ◽  
Akiteru Hatayama ◽  
Kiyoko Nagai ◽  
Yutaka Hayashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas Films
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