Spin polarized electron transmission into GaAs quantum well across Fe3O4: Optical spin orientation analysis

2010 ◽  
Vol 97 (17) ◽  
pp. 172509 ◽  
Author(s):  
E. Wada ◽  
Y. Shirahata ◽  
T. Naito ◽  
M. Itoh ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Orientation ◽  
Orientation Analysis ◽  
Electron Transmission ◽  
Spin Polarized

SPIN-POLARIZED TRANSPORT THROUGH GaAs/AlGaAs PARABOLIC QUANTUM WELL UNDER A UNIFORM MAGNETIC FIELD

2009 ◽  
Vol 08 (01n02) ◽  
pp. 71-74 ◽  
Author(s):  
F. WAN ◽  
M. B. A. JALIL ◽  
S. G. TAN ◽  
T. FUJITA
Keyword(s):  
Quantum Well ◽  
Spin Polarization ◽  
Uniform Magnetic Field ◽  
High Electron ◽  
Practical Applications ◽  
Electron Transmission ◽  
Spin Polarized ◽  
High Spin Polarization ◽  
Polarized Transport ◽  
Spin Polarized Transport

We present a GaAs / AlGaAs -based quantum well device capable of achieving an appreciable spin polarization coupled with high electron transmission. Our numerical results indicate that the device is able to achieve a high spin polarization without the need for less commonly used materials with high g-factors required by previously proposed semiconductor-based systems. The electron transmission and spin polarization amplitude of our structure is found to be robust to the length of the parabolic well, which could ease the fabrication of such structures in practical applications.

Quantum-well and tight-binding analyses of spin-polarized photoemission from Ag/Fe(001) overlayers

1994 ◽  
Vol 49 (1) ◽  
pp. 332-338 ◽  
Author(s):  
N. V. Smith ◽  
N. B. Brookes ◽  
Y. Chang ◽  
P. D. Johnson
Keyword(s):  
Quantum Well ◽  
Tight Binding ◽  
Spin Polarized

SPONTANEOUS SPIN POLARIZATION OF ELECTRONS IN SiGe/Si HETEROSTRUCTURES

2010 ◽  
Vol 09 (05) ◽  
pp. 503-509
Author(s):  
A. JOHN PETER
Keyword(s):  
Zero Magnetic Field ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Resonant Level ◽  
Electron Transmission ◽  
Rashba Spin ◽  
Spin Polarized ◽  
Spin Filters ◽  
Spin Injectors ◽  
The One

The spin-dependent electron transmission phenomenon in an SiGe/Si/SiGe resonant semiconductor heterostructure is employed theoretically to investigate the output transmission current polarization at zero magnetic field. Transparency of electron transmission is calculated as a function of electron energy as well as the well width, within the one electron band approximation along with the spin-orbit interaction. Enhanced spin-polarized resonant tunneling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level is observed. We predict that a spin-polarized current spontaneously emerges in this heterostructure and we estimate theoretically that the polarization can reach 100%. This effect could be employed in the fabrication of spin filters, spin injectors, and detectors based on nonmagnetic semiconductors.

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