scholarly journals Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

2010 ◽  
Author(s):  
Alexander V. Bulgakov ◽  
Anton B. Evtushenko ◽  
Yuri G. Shukhov ◽  
Igor Ozerov ◽  
Wladimir Marine ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Compound Semiconductors ◽  
Cluster Generation

Cluster generation under pulsed laser ablation of zinc oxide

2010 ◽  
Vol 101 (4) ◽  
pp. 585-589 ◽  
Author(s):  
Alexander V. Bulgakov ◽  
Anton B. Evtushenko ◽  
Yuri G. Shukhov ◽  
Igor Ozerov ◽  
Wladimir Marine
Keyword(s):  
Zinc Oxide ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Cluster Generation

scholarly journals Pulsed Laser Ablation Growth and Doping of Epitaxial Compound Semiconductor Films

1995 ◽  
Vol 397 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Christopher M. Rouleau ◽  
D. B. Geohegan ◽  
A. A. Puretzky ◽  
M. A. Strauss ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Compound Semiconductors ◽  
Compound Semiconductor ◽  
Ex Situ ◽  
Semiconductor Films ◽  
Time Resolved ◽  
Control Film ◽  
Ion Probe

ABSTRACTPulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma “plume.” However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam-assisted surface and/or gas-phase reactions. In this paper we describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II–VI, I–III–VI, and column-Ill nitride materials grown recently in this and other laboratories.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

scholarly journals Doping nanoparticles using pulsed laser ablation in a liquid containing the doping agent

2019 ◽  
Vol 1 (10) ◽  
pp. 3963-3972 ◽  
Author(s):  
Arsène Chemin ◽  
Julien Lam ◽  
Gaétan Laurens ◽  
Florian Trichard ◽  
Vincent Motto-Ros ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Doping Agent ◽  
Laser Ablation In Liquids ◽  
Dope Nanoparticles

While doping is crucial for numerous technological applications, its control remains difficult especially when the material is reduced down to the nanometric scale. We suggest a new way to dope nanoparticles using laser ablation in liquids.

scholarly journals Template-free, single step preparation of hollow Coo nano spheres using pulsed laser ablation in liquid environment

2021 ◽  
pp. 103317
Author(s):  
Muidh Alheshibri ◽  
Sultan Akhtar ◽  
Abbad Al Baroot ◽  
Khaled Elsayed ◽  
Hassan S Al Qahtani ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Single Step ◽  
Laser Ablation In Liquid ◽  
Liquid Environment ◽  
Template Free

scholarly journals Synthesis of naked vanadium pentoxide nanoparticles

2021 ◽  
Author(s):  
Patrick Taylor ◽  
Matthew Kusper ◽  
Tina Hesabizadeh ◽  
Luke D. Geoffrion ◽  
Fumiya Watanabe ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Vanadium Pentoxide ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Energy Bandgap ◽  
Β Phase ◽  
Α Phase ◽  
Laser Ablation In Liquids

Vanadium pentoxide α-phase and β-phase synthesized by Pulsed Laser Ablation in Liquids, exhibiting a 2.50 eV and 3.65 eV energy bandgap.

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