On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n‐CdTe contacts

1991 ◽  
Vol 70 (4) ◽  
pp. 2200-2203 ◽  
Author(s):  
R. L. Van Meirhaeghe ◽  
R. van de Walle ◽  
W. H. Laflère ◽  
F. Cardon
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Composition ◽  
The Relationship

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts

1993 ◽  
Vol 74 (3) ◽  
pp. 1885-1889 ◽  
Author(s):  
R. van de Walle ◽  
R. L. Van Meirhaeghe ◽  
W. H. Laflère ◽  
F. Cardon
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interfacial Defects ◽  
The Relationship

Ab Initio Study of SiC/Metal Polar Interfaces: Relation Between Interface Structure and Schottky-Barrier Height

2000 ◽  
Vol 640 ◽  
Author(s):  
Shingo Tanaka ◽  
Masanori Kohyama
Keyword(s):  
Ab Initio ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Adhesive Energy ◽  
Work Functions ◽  
The Difference ◽  
Cubic Silicon Carbide ◽  
The Relationship ◽  
Dynamics Method

ABSTRACTAb initio calculations of the polar interfaces between thin films of titanium and cubic silicon-carbide (SiC) have been performed by using the first-principles molecular dynamics method. Stable configurations, adhesive energies and Schottky-barrier height (SBH) for the Si-terminated and the C-terminated interfaces are obtained. The C-terminated interface has covalent C-Ti bonds, while the Si-terminated interface has shown metallic nature. Adhesive energy/SBH of the C-terminated interface is larger/smaller than that of the Si-terminated one, respectively. In order to examine a conventional SBH model, work functions of SiC slab with Si and with C surface and Ti slab have been calculated and SBHs have been estimated from the difference of work functions. In estimated SBHs between the interfaces, the relationship depend on the crystal orientation as (111) and (001).

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

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