Fabrication of nanometer flat areas onto YBa2Cu3O7−x thin film surfaces by scanning tunneling microscope

1991 ◽  
Vol 70 (6) ◽  
pp. 3376-3378 ◽  
Author(s):  
J. A. Virtanen ◽  
P. Suketu ◽  
G. C. Huth ◽  
Z. H. Cho
1996 ◽  
Vol 69 (24) ◽  
pp. 3752-3753 ◽  
Author(s):  
L. P. Ma ◽  
Y. L. Song ◽  
H. J. Gao ◽  
W. B. Zhao ◽  
H. Y. Chen ◽  
...  

2016 ◽  
Vol 4 (23) ◽  
pp. 5363-5369 ◽  
Author(s):  
Shuhong Li ◽  
Yanli Shang ◽  
Lifang Wang ◽  
Ryan T. K. Kwok ◽  
Ben Zhong Tang

Donor–acceptor π-conjugated aggregation-induced emission molecule demonstrates reversible data storage on its thin film by scanning tunneling microscope.


2007 ◽  
Vol 102 (3) ◽  
pp. 033708 ◽  
Author(s):  
L. Ruppel ◽  
A. Birkner ◽  
G. Witte ◽  
C. Busse ◽  
Th. Lindner ◽  
...  

2004 ◽  
Vol 811 ◽  
Author(s):  
Ø. Dahl ◽  
S. Hallsteinsen ◽  
J. K. Grepstad ◽  
A. Borg ◽  
T. Tybell

ABSTRACTIn the present work we use a scanning tunneling microscope to modify the surface structure of epitaxial SrRuO3 thin films. Point and line etching experiments were carried out in ultra-highvacuum, using tungsten tips. The point etchings showed that pulses fired at small (< 4.5V) bias voltages did not bring about any physical modifications of the film surface, while voltages in excess of4.5 V led to etched holes accompanied by mounds. Moreover, well-defined line etching was achieved with atypical depth of approximately two unit cells and linewidths as small as 5 nm. The experiments demonstrate that a scanning tunneling microscope can be used for nanometer-scale patterning of SrRuO3 thin film surfaces.


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