Nature of the metastable boron–oxygen complex formation in crystalline silicon

2010 ◽  
Vol 108 (10) ◽  
pp. 103713 ◽  
Author(s):  
Richard S. Crandall
Keyword(s):  
Complex Formation ◽  
Crystalline Silicon ◽  
Oxygen Complex

Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline silicon

2003 ◽  
Vol 83 (6) ◽  
pp. 1125-1127 ◽  
Author(s):  
Karsten Bothe ◽  
Rudolf Hezel ◽  
Jan Schmidt
Keyword(s):  
Crystalline Silicon ◽  
Oxygen Complex

Oxygen-derived free-radical and active oxygen complex formation from cobalt(II) chelates in vitro

1992 ◽  
Vol 5 (1) ◽  
pp. 109-115 ◽  
Author(s):  
Phillip M. Hanna ◽  
Maria B. Kadiiska ◽  
Ronald P. Mason
Keyword(s):  
Free Radical ◽  
Complex Formation ◽  
Active Oxygen ◽  
Oxygen Complex

Cluster Computations Related to Silicon Thermal Donors

1985 ◽  
Vol 59 ◽  
Author(s):  
Lawrence C. Snyder ◽  
James W. Corbett
Keyword(s):  
Crystalline Silicon ◽  
Silicon Crystal ◽  
Silicon Monoxide ◽  
Interstitial Oxygen ◽  
Hydrogen Atoms ◽  
Oxygen Complex ◽  
Quantum Chemical Computations ◽  
Silicon Oxygen ◽  
Boron Carbon ◽  
Oxygen Atoms

ABSTRACTAb-initio quantum chemical computations have been applied to a set of molecular clusters derived from Si5 H12 to model defects in crystalline silicon involving boron, carbon, nitrogen, oxygen, and hydrogen. In computations of defect structure, hydrogen atoms terminating silicon valencies are fixed at their computed positions in Si5H12, to represent forces from the lattice, while the position of other atoms are varied.We have computed the stable bonding structures of boron, carbon, nitrogen and oxygen atoms to a vacancy, as well as interstitial oxygen, the silicon-oxygen ylid and two oxygen atoms bound to a vacancy. The structures of the dipositive ions of the oxygen bearing clusters have been computed as part of a search for candidates for the core of the 450° C oxygen thermal donor in silicon crystal. The computed cluster energies are employed to give an account of defect thermochemistry; the addition of the free atoms to a vacancy, the addition of interstitial oxygen atoms to a vacancy, the reaction of interstitial oxygen atoms to form a vacancy-oxygen complex with the emission of silicon monoxide, and the reaction of interstitial oxygen with the dipositive ion of substitutional oxygen to form the dipositive ion of two oxygen atoms bound to a vacancy.

Hydrogen Diffusion and Complex Formation in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
J.T. Borenstein ◽  
D. Tulchinski ◽  
J.W. Corbett
Keyword(s):  
Diffusion Coefficient ◽  
Complex Formation ◽  
Hydrogen Diffusion ◽  
Crystalline Silicon ◽  
Neutral Hydrogen ◽  
Surface Concentration ◽  
Hydrogen Molecules ◽  
Hydrogen Reactions ◽  
Impurity Sites ◽  
Kinetics Of

AbstractThe kinetics of hydrogen diffusion and complex formation in crystalline silicon are investigated using a model previously developed to explain the influence of dopant type and concentration on observed deuterium profiles in silicon. The predictions of the model have been shown to be in close agreement with recent SIMS profiles of deuterated FZ-Si crystals, with the in-diffusion process dominated by trapping at impurity sites and by the formation of immobile hydrogen molecules.Previous studies have treated the surface concentration of hydrogen and the capture radii of hydrogen at complexes as free kinetic parameters. We present an analytic relationship between the diffusion coefficient D of neutral hydrogen and both the hydrogen surface concentration and the capture radius for molecule formation. The consequences of fixing D at the known high-temperature value for the diffusion coefficient in the model are determined. The existence of this analytic relation reduces the number of free parameters in the kinetic model and leads to an improved understanding of hydrogen reactions in silicon.

Effects of germanium doping on the boron-oxygen complex formation in silicon solar cells

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1981-1986 ◽  
Author(s):  
Florent Tanay ◽  
Sébastien Dubois ◽  
Nicolas Enjalbert ◽  
Jordi Veirman ◽  
Pierre Gidon ◽  
...  
Keyword(s):  
Solar Cells ◽  
Complex Formation ◽  
Silicon Solar Cells ◽  
Oxygen Complex
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