Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi Xie; Davy Deduytsche; Marc Schaekers; Matty Caymax; Annelies Delabie; Xin-Ping Qu; Christophe Detavernier

doi:10.1063/1.3490710

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Applied Physics Letters ◽

10.1063/1.3490710 ◽

2010 ◽

Vol 97 (11) ◽

pp. 112905 ◽

Cited By ~ 35

Author(s):

Qi Xie ◽

Davy Deduytsche ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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An Oxynitride Gate Dielectric for Sub-30 Å Complementary Metal Oxide Semiconductor Devices Using Precombustion of Nitrous Oxide

Journal of The Electrochemical Society ◽

10.1149/1.1499503 ◽

2002 ◽

Vol 149 (9) ◽

pp. G532 ◽

Cited By ~ 1

Author(s):

Steven M. Shank ◽

William F. Clark ◽

Wade J. Hodge

Keyword(s):

Nitrous Oxide ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2396891 ◽

2007 ◽

Vol 90 (8) ◽

pp. 082911 ◽

Cited By ~ 18

Author(s):

N. Lu ◽

H.-J. Li ◽

J. J. Peterson ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

High K ◽

High K Gate Dielectric

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6843 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 6843-6848 ◽

Cited By ~ 3

Author(s):

Mitsuru Narihiro ◽

Hitoshi Wakabayashi ◽

Makoto Ueki ◽

Kohichi Arai ◽

Takashi Ogura ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process ◽

Beam System ◽

Mix And Match

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Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2953732 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1440 ◽

Cited By ~ 2

Author(s):

V. Bliznetsov ◽

N. Singh ◽

R. Kumar ◽

N. Balasubramanian ◽

P. Guo ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Cited By ~ 4

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4913832 ◽

2015 ◽

Vol 117 (11) ◽

pp. 112806 ◽

Cited By ~ 57

Author(s):

J. Robertson ◽

Y. Guo ◽

L. Lin

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Defect State ◽

Oxide Interfaces ◽

At Iii

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