Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

2010 ◽  
Vol 97 (11) ◽  
pp. 111105 ◽  
Author(s):  
Jing Zhang ◽  
Hongping Zhao ◽  
Nelson Tansu
Keyword(s):  
Quantum Well ◽  
Crystal Field ◽  
Heavy Hole ◽  
Quantum Well Lasers ◽  
Al Content ◽  
High Al Content

Optical Properties of AlGaN Quantum Well Structures

1999 ◽  
Vol 595 ◽  
Author(s):  
Hideki Hirayama ◽  
Yasushi Enomoto ◽  
Atsuhiro Kinoshita ◽  
Akira Hirata ◽  
Yoshinobu Aoyagi
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Wide Bandgap ◽  
Near Band Edge ◽  
Quantum Well Structures ◽  
Al Content ◽  
Pl Emission ◽  
High Al Content

AbstractWe demonstrate 230-250 nm efficient ultraviolet (UV) photoluminescence (PL) from AlN(AlGaN)/AlGaN multi-quantum-wells (MQWs) fabricated by metalorganic vapor-phase-epitaxy (MOVPE). Firstly, we show the PL properties of high Al content AlGaN bulk (Al content: 85-95%) emitting from near band-edge. We systematically investigated the PL properties of AlGaN-MQWs consisting of wide bandgap AlGaN (Al content: 53-100%) barrier. We obtained efficient PL emission of 234 and 245 nm from AlN/Al0.18Ga0.82N and Al0.8Ga0.2N/Al0.18Ga0.82N MQWs, respectively, at 77 K. The optimum value of well thickness was approximately 1.5 nm. The emission from the AlGaN MQWs were several tens of times stronger than that of bulk AlGaN. We found that the most efficient PL is obtained at around 240 nm from AlGaN MQWs with Al0.8Ga0.2N barriers. Also, we found that the PL from AlGaN MQW is as efficient as that of InGaN QWs at 77 K.

Many Body Effects in Strained Quantum Well Lasers

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Banerjee ◽  
A. K. Srivastava ◽  
A. Bandyopadhyay ◽  
N. Chand
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Optical Emission ◽  
Transverse Magnetic ◽  
Quantum Well Lasers ◽  
Lasing Threshold ◽  
Threshold Condition ◽  
Single Quantum Well ◽  
Hole Band ◽  
Strained Quantum Well

ABSTRACTUnusually large transverse magnetic component has been observed at energy corresponding to the edge of heavy hole band in the optical emission from unstrained and strained layer single quantum well lasers above threshold condition. The existing model of Fermi sea shake-up is inadequate to explain the enhancement in the TM component beyond lasing threshold. Our results indicate that under lasing conditions the directional properties of the emitting dipole arising from electronic transitions to the heavy hole band is modified such that the dipole moment has equal projections in x, y and z directions.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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