Characterization of interface states at III‐V compound semiconductor‐metal interfaces

1991 ◽  
Vol 69 (4) ◽  
pp. 2312-2316 ◽  
Author(s):  
L. Burstein ◽  
J. Bregman ◽  
Yoram Shapira
1985 ◽  
Vol 54 ◽  
Author(s):  
L. J. Brillson

ABSTRACTThe characterization of III-V compound semiconductor-metal interfaces by surface science techniques has led to new relationships between interfacial chemistry and Schottky barrier formation. These and recent results on ternary alloy III-V compounds suggest a greater control of Schottky barrier heights by atomic scale techniques and advanced III-V materials than previously believed.


Author(s):  
Matthias L. Vermeer ◽  
Raymond J. E. Hueting ◽  
Luca Pirro ◽  
Jan Hoentschel ◽  
Jurriaan Schmitz

2018 ◽  
Vol 774 ◽  
pp. 66-71 ◽  
Author(s):  
Martin Lederer ◽  
Agnieszka Betzwar Kotas ◽  
Golta Khatibi ◽  
Herbert Danninger

The adhesive strength of ceramic - copper interfaces was measured in four point bending using a central notch for crack initiation. According to our method, plastic deformation may occur during the delamination process. FEM simulations were employed in order to separate elastic and plastic contributions to the energy consumption of the experiment. In conclusion, a novel delamination criterion based on the stress intensity at the crack tip was established. Here, the stress invariant J3is used as indicator for delamination of the interface. Agreement between experiments and theoretical interpretation is demonstrated for copper layers directly bonded to aluminum oxide.


2013 ◽  
Vol 1 (2) ◽  
pp. 1300022
Author(s):  
Pekka Laukkanen ◽  
Jouko Lång ◽  
Marko Punkkinen ◽  
Mikhail Kuzmin ◽  
Marjukka Tuominen ◽  
...  

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