Liquid source metalorganic chemical vapor deposition of aluminum from triethylamine alane

1991 ◽  
Vol 69 (4) ◽  
pp. 2589-2592 ◽  
Author(s):  
M. E. Gross ◽  
C. G. Fleming ◽  
K. P. Cheung ◽  
L. A. Heimbrook
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Source ◽  
Metalorganic Chemical

Plasma Enhanced Metalorganic Chemical Vapor Deposition of Conductive Oxide Electrodes for Ferroelectric BaTiO3 Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
Jiming Zhang ◽  
Guang-Ji Cui ◽  
Douglas Gordon ◽  
Peter Van Buskirk ◽  
John Steinbeck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Oxide Electrodes ◽  
Liquid Source ◽  
Ferroelectric Capacitors ◽  
Metalorganic Chemical

AbstractThin film heterostructures of BaTiO3/YBa2Cu3O7-x (YBCO) and BaTiO3/LaxSrl-xCoO3 (LSCO) have been prepared by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Both YBCO and LSCO are conductive oxides with perovskite structure and lattice parameters closely matched to BaTiO3. YBCO films were found to deteriorate after the deposition of BaTiO3 under the PE-MOCVD conditions as revealed by X-ray diffraction and electrical characterization. LSCO thin films prepared by PE-MOCVD have a mirror-like surface, exhibit low electrical resistivity (p = 200 μΩ-cm at room temperature) and are robust to BaTiO3 deposition. These characteristics make LSCO a promising electrode material for ferroelectric capacitors.

Preparation of Iridium Films by Liquid Source Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1052-L1054 ◽  
Author(s):  
Sandwip K. Dey ◽  
Jaydeb Goswami ◽  
Chang-Gong Wang ◽  
Prashant Majhi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Source ◽  
Metalorganic Chemical

Single liquid source plasma‐enhanced metalorganic chemical vapor deposition of high‐quality YBa2Cu3O7−xthin films

1992 ◽  
Vol 61 (24) ◽  
pp. 2884-2886 ◽  
Author(s):  
Jiming Zhang ◽  
Robin A. Gardiner ◽  
Peter S. Kirlin ◽  
Robert W. Boerstler ◽  
John Steinbeck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Liquid Source ◽  
Metalorganic Chemical

Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)2 with Tetrahydrofuran Solvent

2000 ◽  
Vol 39 (Part 2, No. 11B) ◽  
pp. L1188-L1190 ◽  
Author(s):  
Toshihide Nabatame ◽  
Masahiko Hiratani ◽  
Masaru Kadoshima ◽  
Yasuhiro Shimamoto ◽  
Yuichi Matsui ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Source ◽  
Metalorganic Chemical

Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition

2001 ◽  
Vol 16 (8) ◽  
pp. 2192-2195 ◽  
Author(s):  
Jaydeb Goswami ◽  
Chang-Gong Wang ◽  
Prashant Majhi ◽  
Yong-Wook Shin ◽  
Sandwip K. Dey
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Wide Range ◽  
Liquid Source ◽  
Metalorganic Chemical

Highly (111)-oriented and conformal iridium (Ir) films were deposited by a liquid source metalorganic-chemical-vapor-deposition process on various substrates. An oxygen-assisted pyrolysis of (methylcyclopentadienyl) (1,5-cyclooctadiene) Ir precursor at a wide range of substrate temperatures (Tsub) between 300 and 700 °C was used. At a low Tsub of 350 °C, the randomly oriented polycrystalline films exhibited an I111/I200 x-ray intensity ratio of 6. However, the films deposited at Tsub = 700 °C on native SiO2 and amorphous SiO2 surfaces were highly oriented with the I111/I200 ratios of 277 and 186, respectively. The transmission electron microscopy study revealed continuous, dense, and faceted microstructures of Ir films. Also, the step coverage of Ir on TiN (64%) was higher than that on amorphous SiO2 (50%) surfaces.

Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent

2002 ◽  
Vol 41 (Part 2, No. 3B) ◽  
pp. L347-L350 ◽  
Author(s):  
Masaru Kadoshima ◽  
Toshihide Nabatame ◽  
Masahiko Hiratani ◽  
Yoshitaka Nakamura ◽  
Isamu Asano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Source ◽  
Metalorganic Chemical
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