The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105A cm−2

1991 ◽  
Vol 69 (5) ◽  
pp. 3345-3350 ◽  
Author(s):  
E. Wolak ◽  
E. Özbay ◽  
B. G. Park ◽  
S. K. Diamond ◽  
David M. Bloom ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Peak Current ◽  
Tunneling Diodes ◽  
Current Densities

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

2018 ◽  
Vol 112 (10) ◽  
pp. 103101 ◽  
Author(s):  
Jimy Encomendero ◽  
Rusen Yan ◽  
Amit Verma ◽  
S. M. Islam ◽  
Vladimir Protasenko ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diodes ◽  
Peak Current ◽  
Tunneling Diodes ◽  
Current Densities

High Speed InAs/AlSb and In0.53Ga0.47As/AlAs Resonant Tunneling Diodes

1992 ◽  
Vol 281 ◽  
Author(s):  
D. H. Chow ◽  
J. N. Schulman ◽  
E. ÖZBAY ◽  
D. M. Bloom
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
High Speed ◽  
Resonant Tunneling Diodes ◽  
Peak Current Density ◽  
Switching Speed ◽  
Tunneling Model ◽  
Band Bending ◽  
Peak Current ◽  
Tunneling Diodes

ABSTRACTWe report a comparison of InAs/AlSb and In0.53Ga0.47As/AlAs resonant tunneling diodes (RTDs) for high speed switching applications. Theoretical simulations are performed for both heterostructure systems using a two band tunneling model, which includes the effects of strain and band bending. Experimental peak current densities are observed to agree well with the calculated values over the range 1×104 A/cm2 to 5× 105 A/cm2. In both types of structures, the maximum peak current density (directly related to switching speed) is determined by device heating. In this regard, InAs/AlSb RTDs are found to be slightly superior to In0.53Ga0.47As/AlAs RTDs due to the low contact and series resistances of InAs. However, higher peak-to-valley ratios and swing voltages are obtained in the In0.53Ga0.47As/AlAs devices up to their maximum attainable peak current density (3.1×105 A/cm2 in this study). Both heterostructure systems yield RTDs with estimated switching times near 1 ps.

scholarly journals Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055307 ◽  
Author(s):  
Evan M. Cornuelle ◽  
Tyler A. Growden ◽  
David F. Storm ◽  
Elliott R. Brown ◽  
Weidong Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Current Density ◽  
Growth Temperature ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Peak Current Density ◽  
Peak Current ◽  
Tunneling Diodes
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