Pulsed laser‐induced electron and positive‐ion emission from Cu(100) under ultrahigh‐vacuum conditions near the threshold for surface damage

1991 ◽  
Vol 69 (6) ◽  
pp. 3472-3479 ◽  
Author(s):  
Paul G. Strupp ◽  
Peter C. Stair ◽  
Eric Weitz
1983 ◽  
Vol 13 ◽  
Author(s):  
J.P. Long ◽  
R.T. Williams ◽  
T.R. Royt ◽  
J.C. Rife ◽  
M.N. Kabler

ABSTRACTIon mass spectrometry, charged particle yields, and kinetic energy distributions of electrons and ions are used to characterize silicon wafers and vacuum-cleaved silicon surfaces under conditions related to laser annealing. We find that alkali metals dominate the positive ion emission from chemically-cleaned wafers, a mass-72 peak tentatively identified as Si2O+ comprises the main ion emission from the cleaved surface, and ion and electron temperatures can be derived from the energy distribution curves although the Si2O+ emission implies more than a simple thermal evaporation process.


Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2521
Author(s):  
Marshall van Zijll ◽  
Samantha S. Spangler ◽  
Andrew R. Kim ◽  
Hazel R. Betz ◽  
Shirley Chiang

Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar+ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar+ energies above 400 eV is likely due to surface damage that is insufficiently annealed.


1996 ◽  
Vol 96-98 ◽  
pp. 316-320 ◽  
Author(s):  
J.T. Dickinson ◽  
J.-J. Shin ◽  
S.C. Langford

Author(s):  
I. V. Borovitskaya ◽  
S. N. Korshunov ◽  
A. N. Mansurova ◽  
A. B. Mikhailova ◽  
V. V. Paramonova ◽  
...  

1989 ◽  
Vol 7 (3) ◽  
pp. 1829-1834 ◽  
Author(s):  
S. C. Langford ◽  
J. T. Dickinson ◽  
L. C. Jensen ◽  
L. R. Pederson

1940 ◽  
Vol 57 (4) ◽  
pp. 335-335 ◽  
Author(s):  
G. A. Jarvis
Keyword(s):  

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