Electron scattering and mobility in a quantum well heterolayer

1984 ◽  
Author(s):  
Vijay K. Arora ◽  
Athar Naeem
Keyword(s):  
Quantum Well ◽  
Electron Scattering

Electron–electron scattering rate in CdTe/CdMnTe single quantum well

2021 ◽  
pp. 2150221
Author(s):  
Zhaosai Jia ◽  
Hailong Wang ◽  
Chuanhe Ma ◽  
Xin Cao ◽  
Qian Gong
Keyword(s):  
Kinetic Energy ◽  
Quantum Well ◽  
Electron Scattering ◽  
Electron Transition ◽  
Collision Probability ◽  
Electron Collision ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Scattering Rate ◽  
Composition Formula

CdMnTe is demonstrated to be a good candidate in the X-ray and [Formula: see text]-ray detector application, however, there are few reports on theoretical analysis of electron scattering rate in CdMnTe quantum well. Within the framework of effective mass approximation and envelope function approximation, the influence of the Mn alloy composition ([Formula: see text], the well width ([Formula: see text], the electron temperature ([Formula: see text] and the electron density ([Formula: see text] on the electron–electron scattering rate (1/[Formula: see text] in the CdTe/Cd[Formula: see text]Mn[Formula: see text]Te single quantum well (SQW), are simulated by shooting method and Fermi’s Golden Rule. The results show that 1/[Formula: see text] is significant inverse proportional to [Formula: see text], but positively proportional to [Formula: see text] and [Formula: see text]. Except for a small peak at 20 K, 1/[Formula: see text] is not sensitive to [Formula: see text]. The above differential dependency of 1/[Formula: see text] on [Formula: see text] and [Formula: see text] can be interpreted by sub-band separation ([Formula: see text], which is proportional to [Formula: see text] but inversely proportional to [Formula: see text]. When [Formula: see text] decreases gradually, the electron transition becomes easier, which leads to 1/[Formula: see text] increases. The dependency of 1/[Formula: see text] on [Formula: see text] can be interpreted by kinetic energy of electrons. The larger the electron kinetic energy is, the more difficult the electron transition from first excited state to ground state is, which leads to 1/[Formula: see text] decreasing. The dependency of 1/[Formula: see text] on [Formula: see text] can be interpreted by the Coulomb interaction between electrons, i.e., the increase of electron collision probability caused by the increase of [Formula: see text].

scholarly journals Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Kihoon Park ◽  
Ahmed Mohamed ◽  
Mitra Dutta ◽  
Michael A. Stroscio ◽  
Can Bayram
Keyword(s):  
Quantum Well ◽  
Group Velocity ◽  
Electron Scattering ◽  
Optical Phonons ◽  
High Group

Spin-dependent processes in exciton–electron scattering in quantum well structures with a 2DEG

1998 ◽  
Vol 24 (4) ◽  
pp. 269-272 ◽  
Author(s):  
V.P. Kochereshko ◽  
A.V. Platonov ◽  
F. Bassani ◽  
R.T. Cox
Keyword(s):  
Quantum Well ◽  
Electron Scattering ◽  
Quantum Well Structures ◽  
Dependent Processes

Electron–electron inter-subband scattering in GaAs quantum wells

1996 ◽  
Vol 74 (S1) ◽  
pp. 252-255
Author(s):  
Zhi Zhong Xu ◽  
D. Morris
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Scattering ◽  
Multiple Quantum Well ◽  
Golden Rule ◽  
Multiple Quantum ◽  
Hot Electron ◽  
Quantum Well Structures ◽  
Scattering Rate ◽  
Relaxation Channel

The role of electron–electron scattering in the dynamics of inter-subband relaxation in GaAs quantum wells is investigated theoretically. The scattering rate is calculated using the Fermi golden rule, as a function of the carrier densities. The dependence of the inter-subband relaxation time on the quantum-well width is also investigated. Calculations are performed for multiple quantum-well structures with well widths varying from 80 to 240 Å (1 Å = 10−10 m). The hot electron distribution and the subband occupation function are taken into account in these calculations. Results show that the electron–electron scattering rate increases linearly as a function of the carrier densities. A band-filling effect limits the efficiency of this mechanism under high carrier densities (> 1012 cm−2). For thick well (180 Å) structures, this relaxation channel is as efficient as the phonon relaxation channel.

Inelastic hot electron scattering by neutral acceptors in multiple quantum well structures

1997 ◽  
Vol 103 (3) ◽  
pp. 151-154 ◽  
Author(s):  
I.I. Reshina ◽  
D.N. Mirlin ◽  
V.I. Perel ◽  
A.Yu. Dobin ◽  
A.G. Agranov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Hot Electron ◽  
Quantum Well Structures
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