scholarly journals Large thermoelectric figure of merit for three-dimensional topological Anderson insulators via line dislocation engineering

2010 ◽  
Vol 97 (7) ◽  
pp. 073108 ◽  
Author(s):  
O. A. Tretiakov ◽  
Ar. Abanov ◽  
Shuichi Murakami ◽  
Jairo Sinova
Keyword(s):  
Figure Of Merit ◽  
Three Dimensional ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Line Dislocation ◽  
Anderson Insulators

Atomic-Scale Three-Dimensional Phononic Crystals With a Large Thermoelectric Figure of Merit

2008 ◽  
Author(s):  
Jean-Numa Gillet ◽  
Sebastian Volz
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Phononic Crystal ◽  
Three Dimensional ◽  
Phononic Crystals ◽  
Atomic Scale ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Low Thermal Conductivity ◽  
Cmos Compatible

The design of thermoelectric materials led to extensive research on superlattices with a low thermal conductivity. Indeed, the thermoelectric figure of merit ZT varies with the inverse of the thermal conductivity but is directly proportional to the power factor. Unfortunately, as nanowires, superlattices cancel heat conduction in only one main direction. Moreover they often show dislocations owing to lattice mismatches, which reduces their electrical conductivity and avoids a ZT larger than unity. Self-assembly is a major epitaxial technology to design ultradense arrays of germanium quantum dots (QDs) in silicon for many promising electronic and photonic applications as quantum computing. Accurate positioning of the self-assembled QD can now be achieved with few dislocations. We theoretically demonstrate that high-density three-dimensional (3-D) arrays of self-assembled Ge QDs, with a size of only some nanometers, in a Si matrix can also show an ultra-low thermal conductivity in the three spatial directions. This property can be considered to design new CMOS-compatible thermoelectric devices. To obtain a realistic and computationally-manageable model of these nanomaterials, we simulate their thermal behavior with atomic-scale 3-D phononic crystals. A phononic-crystal period (supercell) consists of diamond-like Si cells. At each supercell center, we substitute Si atoms by Ge atoms to form a box-like nanoparticle. Since this phononic crystal is periodic, we compute its phonon dispersion curves by classical lattice dynamics. Non-periodicities can be introduced with statistical distributions. From the flat dispersion curves, we obtain very small group velocities; this reduces the thermal conductivity in our phononic crystal compared to bulk Si. However, owing to the wave-particle duality at very small scales in quantum mechanics, another reduction arises from multiple scattering of the particle-like phonons in nanoparticle clusters. At room temperature, the thermal conductivity in an example phononic crystal can be reduced by a factor of at least 165 compared to bulk Si or below 0.95 W/mK. This value, which is lower than the classical Einstein limit of single crystalline Si, is an upper limit of the thermal conductivity since we use an incoherent-scattering approach for the nanoparticles. Because of its very low thermal conductivity, we hope to obtain a much larger ZT than unity in our atomic-scale 3-D phononic crystal. Indeed, this silicon-based nanomaterial is crystalline with a power factor that can be optimized by doping using CMOS-compatible processes. Future research on the phononic-crystal electrical conductivity has to be performed in order to compute the full ZT with a good accuracy.

Extraordinary thermoelectric performance of NaBaBi with degenerate and highly non-parabolic bands compared to LiBaSb and Bi2Te3

2021 ◽  
Author(s):  
Enamul Haque
Keyword(s):  
Fermi Level ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4

2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Co Substitution

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.

Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Vacuum Sintering ◽  
Thermoelectric Figure ◽  
Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

Effects of Ce filling fraction and Fe content on the thermoelectric properties of Co-rich CeyFexCo4−xSb12

2001 ◽  
Vol 16 (3) ◽  
pp. 837-843 ◽  
Author(s):  
Xinfeng Tang ◽  
Lidong Chen ◽  
Takashi Goto ◽  
Toshio Hirai
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Single Phase ◽  
Lattice Thermal Conductivity ◽  
Hole Concentration ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Filling Fraction ◽  
Fe Content

Single-phase filled skutterudite compounds, CeyFexCo4−xSb12 (x = 0 to 3.0, y = 0 to 0.74), were synthesized by a melting method. The effects of Fe content and Ce filling fraction on the thermoelectric properties of CeyFexCo4−xSb12 were investigated. The lattice thermal conductivity of Ce-saturated CeyFexCo4−xSb12, y being at the maximum corresponding to x, decreased with increasing Fe content (x) and reached its minimum at about x = 1.5. When x was 1.5, lattice thermal conductivity decreased with increasing Ce filling fraction till y = 0.3 and then began to increase after reaching the minimum at y = 0.3. Hole concentration and electrical conductivity of Cey Fe1.5Co2.5Sb12 decreased with increasing Ce filling fraction. The Seebeck coefficient increased with increasing Ce filling fraction. The greatest dimensionless thermoelectric figure of merit T value of 1.1 was obtained at 750 K for the composition of Ce0.28Fe1.52Co2.48Sb12.

High-Thermoelectric Figure of Merit Realized in p-Type Half-Heusler Compounds: ZrCoSnxSb1-x

2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Heusler Compounds ◽  
Thermoelectric Figure ◽  
P Type
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