Nitrogen‐doped iron‐film‐based laminated materials for thin‐film recording heads

1991 ◽  
Vol 69 (8) ◽  
pp. 5625-5627 ◽  
Author(s):  
S. Wang ◽  
M. H. Kryder
Keyword(s):  
Thin Film ◽  
Iron Film ◽  
Nitrogen Doped ◽  
Recording Heads ◽  
Laminated Materials

Improved high moment FeAlN/SiO/sub 2/ laminated materials for thin film recording heads

1991 ◽  
Vol 27 (6) ◽  
pp. 4879-4881 ◽  
Author(s):  
S. Wang ◽  
K.E. Obermyer ◽  
M.H. Kryder
Keyword(s):  
Thin Film ◽  
High Moment ◽  
Recording Heads ◽  
Laminated Materials

Tannin-based thin-film composite membranes integrated with nitrogen-doped graphene quantum dots for butanol dehydration through pervaporation

2021 ◽  
Vol 623 ◽  
pp. 119077
Author(s):  
Rumwald Leo G. Lecaros ◽  
Reincess E. Valbuena ◽  
Lemmuel L. Tayo ◽  
Wei-Song Hung ◽  
Chien-Chieh Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Graphene Quantum Dots ◽  
Composite Membranes ◽  
Film Composite ◽  
Nitrogen Doped ◽  
Thin Film Composite ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene

Non-uniform response in the pole tips of thin film recording heads

1987 ◽  
Vol 23 (5) ◽  
pp. 3161-3163 ◽  
Author(s):  
M. Re ◽  
R. Katti ◽  
W. Rave ◽  
M. Kryder
Keyword(s):  
Thin Film ◽  
Recording Heads

Effects of fluorine incorporation on the structural and electrical properties of Diamond-like carbon

2015 ◽  
Vol 1734 ◽  
Author(s):  
Kento Nakanishi ◽  
Jun Otsuka ◽  
Masanori Hiratsuka ◽  
Chen Chung Du ◽  
Akira Shirakura ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Flow Rate ◽  
Gas Flow ◽  
Diamond Like Carbon ◽  
Gas Flow Rate ◽  
Sheet Resistivity ◽  
Nitrogen Doped ◽  
Structural And Electrical Properties

ABSTRACTDiamond-like carbon (DLC) has widespread attention as a new material for its application to thin film solar cells and other semiconducting devices. DLC can be produced at a lower cost than amorphous silicon, which is utilized for solar cells today. However, the electrical properties of DLC are insufficient for this purpose because of many dangling bonds in DLC. To solve this problem, we investigated the effects of the fluorine incorporation on the structural and electrical properties of DLC.We prepared five kinds of fluorinated DLC (F-DLC) thin film with different amounts of fluorine. Films were deposited by the radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. C6H6 and C6HF5 were used as source gases. The total gas flow rate was constant and the gas flow rate ratio R (=C6H6 / (C6H6 + C6HF5)) was changed from 0 to 1 in 0.25 ratio steps. We also prepared nitrogen doped DLC (F-DLC) on p-Si using N2 gas as a doping gas to form nitrogen doped DLC (F-DLC) / p-Si heterojunction diodes.X-ray photoelectron spectroscopy (XPS) showed that fluorine concentration in the DLC films was controlled. Moreover, the XPS analysis of the C1s spectrum at R=2/4 showed the presence of CF bonding. At R=1, CF2 bonding was observed in addition to CF bonding. The sheet resistivity of the films changed from 3.07×1012 to 4.86×109 Ω. The minimum value was obtained at R=2/4. The current-voltage characteristics indicated that nitrogen doped F-DLC of 2/4 and p-Si heterojunction diode exhibited the best rectification characteristics and its energy conversion efficiency had been maximized. This is because of a decrease of dangling bonds density by ESR analysis and an increase of sp2 structures by Raman analysis. When the fluorine is over certain content, the sheet resistivity increases because chain structures become larger, which is due to the CF2 bonding in F-DLC prevents ring structures. Many C2F4 species were observed and it may become precursors of the chain structure domains, such as (CF2)n.In this study, we revealed effects of fluorine incorporation on DLC and succeeded in increasing its conductivity and improving rectification characteristics of DLC/ p-Si hetero-junction diodes. Our results indicate that DLC fluorination is effective for the semiconducting material, such as solar cell applications.

Electrical transport properties in nitrogen-doped p-type ZnO thin film

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Zno Thin Film ◽  
Electrical Transport Properties ◽  
Nitrogen Doped ◽  
P Type

Vapor-deposited thin-film recording heads

1971 ◽  
Vol 7 (3) ◽  
pp. 675-679 ◽  
Author(s):  
A. Kaske ◽  
P. Oberg ◽  
M. Paul ◽  
G. Sauter
Keyword(s):  
Thin Film ◽  
Recording Heads

The Visible Photocatalysis Properties of Nitrogen-doped TiO2 Thin Film

2019 ◽  
Vol 2 (20) ◽  
pp. 101-107 ◽  
Author(s):  
Yang-Ming Lu ◽  
Chung-Kai Liu ◽  
Chao-Ming Huang
Keyword(s):  
Thin Film ◽  
Tio2 Thin Film ◽  
Doped Tio2 ◽  
Nitrogen Doped ◽  
Visible Photocatalysis
Sign in / Sign up

Export Citation Format

Share Document