Pulsed laser deposition of high-quality ZnCdO epilayers and ZnCdO/ZnO single quantum well on sapphire substrate

2010 ◽  
Vol 97 (6) ◽  
pp. 061911 ◽  
Author(s):  
W. F. Yang ◽  
B. Liu ◽  
R. Chen ◽  
L. M. Wong ◽  
S. J. Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well

Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition

2011 ◽  
Vol 98 (12) ◽  
pp. 121903 ◽  
Author(s):  
W. F. Yang ◽  
L. M. Wong ◽  
S. J. Wang ◽  
H. D. Sun ◽  
C. H. Ge ◽  
...  
Keyword(s):  
Quantum Well ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Single Quantum ◽  
Single Quantum Well

Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate

2013 ◽  
Vol 50 (6) ◽  
pp. 551-556
Author(s):  
Eun-Hee Jeong ◽  
Jun-Ki Chung ◽  
Rae-Young Jung ◽  
Sung-Jin Kim ◽  
Sang-Yeup Park
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

scholarly journals Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

2019 ◽  
Vol 1 (2) ◽  
pp. 643-655 ◽  
Author(s):  
Francesco Tumino ◽  
Carlo S. Casari ◽  
Matteo Passoni ◽  
Valeria Russo ◽  
Andrea Li Bassi
Keyword(s):  
Pulsed Laser Deposition ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Large Area ◽  
Molybdenum Disulphide ◽  
High Quality ◽  
Nanosized Crystals

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.

High quality ZnS/Au/ZnS transparent conductive tri-layer films deposited by pulsed laser deposition

2016 ◽  
Vol 121 (1) ◽  
pp. 68-71 ◽  
Author(s):  
Caifeng Wang ◽  
Qingshan Li ◽  
Jisuo Wang ◽  
Lichun Zhang ◽  
Fengzhou Zhao ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
Vol 368-372 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
Morphological Properties ◽  
High Quality ◽  
Atomic Force ◽  
Different Temperatures ◽  
Zno Powder

High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films. It was observed that the alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of the thin films.

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