Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

2010 ◽  
Vol 97 (5) ◽  
pp. 051907 ◽  
Author(s):  
J. J. Wierer ◽  
A. A. Allerman ◽  
Q. Li
Keyword(s):  
Silicon Impurity

The silicon impurity as a possible growth-regime indicator for LiNbO3 crystals

1985 ◽  
Vol 20 (8) ◽  
pp. 1047-1054 ◽  
Author(s):  
S. Erdei ◽  
Zs. Szaller ◽  
K. Raksányi ◽  
Gy. Matók
Keyword(s):  
Growth Regime ◽  
Silicon Impurity

Effects of Implant Temperature on Disordering of AlAs-GaAs Superlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
E. A. Dobisz ◽  
B. Tell ◽  
H. G. Craighead ◽  
S. A. Schwarz ◽  
M. C. Tamargo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Bulk Gaas ◽  
Directional Diffusion ◽  
Transmission Electron ◽  
Silicon Impurity ◽  
Secondary Ion ◽  
Mass Spectro ◽  
Superlattice Period

ABSTRACTThe effect of implant temperature, superlattice period, and directional diffusion has been studied for silicon impurity-enhanced compositional disordering of GaAs-AlAs superlattices (SL) of 9 ran and 16 nm period. The SL were implanted with Si at temperatures of 483 K, 293 K, and 77 K, with an energy of 100 keV and dose of 2.5 × 1014 cm-2. These were examined by cross-sectional transmission electron microscopy and secondary ion mass spectro-scopy for structural and compositional information. The damage due to implantation prior to annealing is strikingly less for superlattices than for bulk GaAs. All annealed samples exhibited disordering, with the 9 nm period SL exhibiting a deeper disordered region than the 16 nm SL. The greatest enhancement was found in the 9 nm period SL implanted at 77 K, in which the disordering extended from a depth of 25 nm to =300 nm. The mixing was found to be anisotropie, with the SL mixing propagating greater in depth than in the lateral directions. The result has important implications for high resolution patterning possibilities with this method.

The state of oxygen and its interaction with silicon impurity in GaAs

1986 ◽  
Vol 21 (1) ◽  
pp. 77-84 ◽  
Author(s):  
M.F. Reznitchenko ◽  
L.A. Borisova ◽  
A.I. Saprikin
Keyword(s):  
The State ◽  
Silicon Impurity
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