Deep level transient spectroscopy characterization of tungsten‐related deep levels in silicon

1991 ◽  
Vol 69 (1) ◽  
pp. 278-283 ◽  
Author(s):  
S. Boughaba ◽  
D. Mathiot
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

Electrically Active Deep Levels in ScN

2001 ◽  
Vol 699 ◽  
Author(s):  
Florentina Perjeru ◽  
Xuewen Bai ◽  
Martin E. Kordesch
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Physical Vapor Deposition ◽  
Deep Level ◽  
Reactive Sputtering ◽  
Deep Levels ◽  
Si Substrates ◽  
Transient Spectroscopy

AbstractWe report the electronic characterization of n-ScN in ScN-Si heterojunctions using Deep Level Transient Spectroscopy of electrically active deep levels. ScN material was grown by plasma assisted physical vapor deposition and by reactive sputtering on commercial p+ Si substrates. Deep level transient spectroscopy of the junction grown by plasma assisted physical vapor deposition shows the presence of an electronic trap with activation energy EC-ET= 0.51 eV. The trap has a higher concentration (1.2–1.6 1013cm−3) closer to the ScN/Si interface. Junctions grown by sputtering also have an electronic trap, situated at about EC-ET= 0.90 eV.

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy

2009 ◽  
Vol 615-617 ◽  
pp. 381-384 ◽  
Author(s):  
Masashi Kato ◽  
Kosuke Kito ◽  
Masaya Ichimura
Keyword(s):  
Temperature Dependence ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Deep Levels ◽  
Donor Level ◽  
Acceptor Level ◽  
Transient Spectroscopy ◽  
Lower Resistivity

We measured the temperature dependence of the electrical resistivity for two high-purity undoped 6H-SiC bulk wafers with resistivities of 1.5103 cm and 8.3108 cm at room temperature. We also characterized the deep levels affecting the semi-insulating property by current deep level transient spectroscopy (I-DLTS) and photo induced current level transient spectroscopy (PICTS) measurements. The activation energies of the resistivity were 0.11 eV and 0.59 eV for the samples with lower and higher resistivities, respectively. In I-DLTS and PICTS spectra, the sample with lower resistivity shows a donor level at Ec0.17 eV and two acceptor levels around Ec0.40 eV, while the sample with higher resistivity shows acceptor levels at Ec0.77 eV and Ev+0.46 eV. We calculated the temperature dependence of the resistivity with a model considering one donor level and one acceptor level based on parameters from I-DLTS peaks. We reproduced the experimental results only for the sample with lower resistivity. The acceptor level near the valence band needs to be considered to explain the resistivity for the sample with higher resistivity.

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy
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