Electrical characterization of zinc oxide/aluminum nitride thin film precursor field effect transistor structures: A conducting atomic force microscopy and density functional theoretical study

2010 ◽  
Vol 108 (9) ◽  
pp. 094510 ◽  
Author(s):  
Shirshendu Dey ◽  
Suhas Jejurikar ◽  
Somesh Kumar Bhattacharya ◽  
Anirban Banerji ◽  
K. P. Adhi ◽  
...  
RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3336-3342 ◽  
Author(s):  
Marc Courté ◽  
Sandeep G. Surya ◽  
Ramesh Thamankar ◽  
Chao Shen ◽  
V. Ramgopal Rao ◽  
...  

A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).


2001 ◽  
Vol 40 (1-5) ◽  
pp. 171-180 ◽  
Author(s):  
Xuguang Wang ◽  
Jie Zhu ◽  
Hongzhou Zhang ◽  
Tai-Chou Lee ◽  
Trinh Vo ◽  
...  

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