Effect of In[sub x]Ga[sub 1−X]As Underlying Layer and Growth Mode on the Surface Morphology of In[sub 0.5]Ga[sub 0.5]As∕GaAs Quantum Dots

2010 ◽  
Author(s):  
A. K. Ismail ◽  
D. Aryanto ◽  
Z. Othaman ◽  
A. S. Ameruddin ◽  
A. K. Yahya ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Growth Mode

Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski–Krastanow growth mode

1997 ◽  
Vol 70 (24) ◽  
pp. 3278-3280 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Doo-Cheol Park ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Quantum Dots ◽  
Growth Mode ◽  
Cdse Quantum Dots ◽  
Self Organized

Stranski–Krastanov growth mode in Ge/Si(001) self-assembled quantum dots

2003 ◽  
Vol 253 (1-4) ◽  
pp. 190-197 ◽  
Author(s):  
S.N. Santalla ◽  
C. Kanyinda-Malu ◽  
R.M. de la Cruz
Keyword(s):  
Quantum Dots ◽  
Growth Mode ◽  
Self Assembled

Growth Evolution of (Zn,Cd)Se Quantum Dots Deduced from Spatially Resolved Structural and Optical Characterization

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Leonard ◽  
D. Hommel ◽  
A. Stockmann ◽  
H. Selke ◽  
J. Seufert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Direction ◽  
Growth Mode ◽  
Gradual Transition ◽  
Mode Transition ◽  
Spatially Resolved ◽  
Composition Fluctuations

ABSTRACTThe growth mode of CdSe layers grown by migration enhanced epitaxy between ZnSe barriers has been investigated. In situ reflection high-energy electron diffraction shows a gradual transition to a three-dimensional growth mode which, however, is not accompanied by a change of the surface lattice constant. High-resolution transmission electron micrographs reveal a strong Cd diffusion, leading to ternary ZnCdSe quantum wells. Furthermore. composition fluctuations perpendicular to the growth direction on a nanometer scale are found already prior to the beginning of the growth mode transition. In the case of heterostructures containing a CdSe layer that has undergone the growth mode transition, micrographs show Cd-rich quantum dots with diameters of around 8 nm and heights of around 1.5 nm within a ternary quantum well. By spatially resolved photoluminescence the emission from single quantum dots could be observed. The polarization dependence of the emission from single dots indicates an asymmetric shape of the dots with certain preferential orientations along the [110] and [110] directions.

Surface morphology of AlN and size dispersion of GaN quantum dots

2005 ◽  
Vol 274 (3-4) ◽  
pp. 387-393 ◽  
Author(s):  
Akihiro Matsuse ◽  
Nicolas Grandjean ◽  
Benjamin Damilano ◽  
Jean Massies
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Size Dispersion

scholarly journals Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films

2018 ◽  
pp. 1800523 ◽  
Author(s):  
Matthew A. Laurent ◽  
Stacia Keller ◽  
Umesh K. Mishra
Keyword(s):  
Surface Morphology ◽  
Comprehensive Analysis ◽  
Growth Mode

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

2019 ◽  
Vol 19 (5) ◽  
pp. 557-562
Author(s):  
Yi Wang ◽  
Xiang Guo ◽  
Jiemin Wei ◽  
Chen Yang ◽  
Zijiang Luo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Critical Thickness

Impact of Annealing on Surface Morphology and Photoluminescence of Self-Assembled Ge and Si Quantum Dots

2014 ◽  
Vol 14 (7) ◽  
pp. 5266-5271 ◽  
Author(s):  
Alireza Samavati ◽  
Zulkafli Othaman ◽  
Shadab Dabagh ◽  
Sib Krishna Ghoshal
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Self Assembled ◽  
Si Quantum Dots

scholarly journals Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Christopher F. Schuck ◽  
Simon K. Roy ◽  
Trent Garrett ◽  
Qing Yuan ◽  
Ying Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Tensile Strain ◽  
Quantum Systems ◽  
Growth Mode ◽  
Wetting Layer ◽  
Precise Control ◽  
Growth Regime ◽  
Inp Substrates ◽  
Lattice Matched

AbstractDriven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TSQDs) have begun to form. This anomalous SK behavior enables simultaneous tuning of both TSQD size and WL thickness. No such departure from the canonical SK growth regime has been reported previously. As such, we can now modify QD-WL interactions, with future benefits that include more precise control of TSQD band structure for infrared optoelectronics and quantum optics applications.

Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots

2001 ◽  
Vol 79 (22) ◽  
pp. 3615-3617 ◽  
Author(s):  
P. B. Joyce ◽  
T. J. Krzyzewski ◽  
G. R. Bell ◽  
T. S. Jones
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Morphology Evolution ◽  
Surface Morphology Evolution
Sign in / Sign up

Export Citation Format

Share Document