Grain‐boundary interface electron traps in commercial zinc oxide varistors

1990 ◽  
Vol 68 (12) ◽  
pp. 6495-6500 ◽  
Author(s):  
R. A. Winston ◽  
J. F. Cordaro
Keyword(s):  
Zinc Oxide ◽  
Grain Boundary ◽  
Electron Traps ◽  
Zinc Oxide Varistors

Impedance Spectroscopic Study of Zinc Oxide Varistors

1991 ◽  
Vol 238 ◽  
Author(s):  
A. Sadhu ◽  
Q. Banerjee ◽  
M. J. Patni ◽  
T. R. Rananohan
Keyword(s):  
Zinc Oxide ◽  
Grain Boundary ◽  
Negative Charge ◽  
Polycrystalline Material ◽  
Schottky Barriers ◽  
Defect States ◽  
Potential Barriers ◽  
Excess Negative Charge ◽  
Boundary Properties ◽  
Zinc Oxide Varistors

ABSTRACTPolycrystalline zinc oxide containing oxides of bismuth, cobalt, manganese and antimony is found to exhibit highly non-ohmic I–V characteristic arising due to the presence of schottky barriers at the grain boundaries. Defect states present at the grain–grain boundary interfaces store excess negative charge and give rise to such potential barriers. Any improvement in the I–V characteristics therefore demands the understanding of grain boundary properties of the material. Impedance spectroscopy is found to separate grain and grain boundary contributions in a polycrystalline material and is used to determine grain boundary contributions towards the electrical behavior of the zinc oxide varistors. It also helps in identifying stored charges and defect states present and elucidates different trapping phenomena occurring at the interface behavior of zinc oxide varistors.

Bulk electron traps in zinc oxide varistors

1986 ◽  
Vol 60 (12) ◽  
pp. 4186-4190 ◽  
Author(s):  
J. F. Cordaro ◽  
Y. Shim ◽  
J. E. May
Keyword(s):  
Zinc Oxide ◽  
Electron Traps ◽  
Zinc Oxide Varistors
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