Influence of elastic stress on the growth kinetics of planar thin‐film binary diffusion couples

1990 ◽  
Vol 68 (3) ◽  
pp. 1252-1264 ◽  
Author(s):  
William C. Johnson ◽  
G. Martin
Keyword(s):  
Thin Film ◽  
Growth Kinetics ◽  
Elastic Stress ◽  
Diffusion Couples ◽  
Binary Diffusion ◽  
Kinetics Of

Microstructural Characterization and Growth Kinetics of the Reaction Layer in U-10wt% Zr/Zircaloy-4 Diffusion Couples

2018 ◽  
Vol 47 (9) ◽  
pp. 2675-2681
Author(s):  
Zhang Yuting ◽  
Wang Xin ◽  
Liu Pengchuang ◽  
Zeng Gang ◽  
Pang Xiaoxuan ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Reaction Layer ◽  
Microstructural Characterization ◽  
Diffusion Couples ◽  
Kinetics Of

Thermal stability and growth kinetics of Co2Si and CoSi in thin‐film reactions

1982 ◽  
Vol 53 (6) ◽  
pp. 4406-4410 ◽  
Author(s):  
K. N. Tu ◽  
G. Ottaviani ◽  
R. D. Thompson ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Growth Kinetics ◽  
Kinetics Of

X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

2010 ◽  
Vol 256 (23) ◽  
pp. 7178-7185 ◽  
Author(s):  
K. McLeod ◽  
S. Kumar ◽  
N.K. Dutta ◽  
R.St.C. Smart ◽  
N.H. Voelcker ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Kinetics ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Kinetics Of

Thin-Film Reaction between α-Fe2O3 and (001) MgO

1998 ◽  
Vol 4 (2) ◽  
pp. 141-145 ◽  
Author(s):  
Matthew T. Johnson ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Elevated Temperatures ◽  
Low Voltage ◽  
Oxide System ◽  
Diffusion Couples ◽  
Corundum Structure ◽  
Transmission Electron ◽  
Bulk Substrate ◽  
Kinetics Of ◽  
Voltage Scanning

The kinetics of a thin-film, solid-state reaction were investigated in the spinel-forming oxide system Fe2O3/MgO. In this study, epitactic thin films of Fe2O3 (α, or corundum, structure) were deposited on (001)-oriented MgO using pulsed-laser deposition (PLD). The resulting diffusion couples were then reacted at elevated temperatures in air to induce the reaction between the thin-film and bulk substrate to form the spinel, MgFe2O4. Both the as-deposited and reacted diffusion couples were characterized using low-voltage scanning and transmission electron microscopy. These techniques allow the kinetics of the reaction and the structural properties of the spinel to be investigated.

Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

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