A new magnetron based gas aggregation source of metal nanoclusters coupled to a double time-of-flight mass spectrometer system

2010 ◽  
Vol 81 (7) ◽  
pp. 075110 ◽  
Author(s):  
Tahzeeb Momin ◽  
Ashok Bhowmick
Keyword(s):  
Mass Spectrometer ◽  
Time Of Flight ◽  
Metal Nanoclusters ◽  
Flight Mass Spectrometer ◽  
Mass Spectrometer System ◽  
Double Time ◽  
Spectrometer System

A TIME-OF-FLIGHT MASS SPECTROMETER FOR SIMS AND FIELD IONISED NEUTRAL ANALYSIS USING A PULSED LMIS

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-577-C6-582 ◽  
Author(s):  
A. R. Waugh ◽  
D. R. Kingham ◽  
C. H. Richardson ◽  
M. Goff
Keyword(s):  
Mass Spectrometer ◽  
Time Of Flight ◽  
Flight Mass Spectrometer

The Influence of Doping on the Etching of Si(111)

1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer
Keyword(s):  
Mass Spectrometer ◽  
Doping Level ◽  
Etch Rate ◽  
Plasma Reactors ◽  
Doping Effects ◽  
Mass Spectrometer System ◽  
Spectrometer System

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.

Sign in / Sign up

Export Citation Format

Share Document