Atomspheric pressure organometallic vapor‐phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wells

1990 ◽  
Vol 68 (7) ◽  
pp. 3356-3363 ◽  
Author(s):  
T. Y. Wang ◽  
A. W. Kimball ◽  
G. S. Chen ◽  
D. Birkedal ◽  
G. B. Stringfellow
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Strained Quantum Wells

Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°‐off GaAs substrates using ethyldimethylindium

1992 ◽  
Vol 60 (8) ◽  
pp. 1007-1009 ◽  
Author(s):  
T. Y. Wang ◽  
D. F. Welch ◽  
D. R. Scifres ◽  
D. W. Treat ◽  
R. D. Bringans ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrates

Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering

1992 ◽  
Vol 124 (1-4) ◽  
pp. 1-9 ◽  
Author(s):  
D.W. Kisker ◽  
G.B. Stephenson ◽  
P.H. Fuoss ◽  
F.J. Lamelas ◽  
S. Brennan ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Grazing Incidence ◽  
Atomic Scale ◽  
X Ray ◽  
X Ray Scattering ◽  
Scale Characterization ◽  
Ray Scattering

Metalorganic vapor phase epitaxial growth and characterization of ZnSe-GaAs multilayered structures

1992 ◽  
Vol 117 (1-4) ◽  
pp. 543-548 ◽  
Author(s):  
Mitsuru Funato ◽  
Masahiro Ishii ◽  
Prakash A. Murawala ◽  
Osamu Tsuji ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Multilayered Structures

Metalorganic vapor-phase epitaxial growth and characterization of vertical InP nanowires

2003 ◽  
Vol 83 (16) ◽  
pp. 3371-3373 ◽  
Author(s):  
S. Bhunia ◽  
T. Kawamura ◽  
Y. Watanabe ◽  
S. Fujikawa ◽  
K. Tokushima
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase

Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy

2004 ◽  
Vol 260 (1-2) ◽  
pp. 125-129 ◽  
Author(s):  
Takao Misaki ◽  
Akihiro Wakahara ◽  
Hiroshi Okada ◽  
Akira Yoshida
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Organometallic vapor‐phase‐epitaxial growth and characterization of ZnGeAs2on GaAs

1989 ◽  
Vol 65 (5) ◽  
pp. 1952-1956 ◽  
Author(s):  
G. S. Solomon ◽  
M. L. Timmons ◽  
J. B. Posthill
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase

Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)

1997 ◽  
Vol 26 (10) ◽  
pp. 1205-1213 ◽  
Author(s):  
H. Marchand ◽  
P. Desjardins ◽  
S. Guillon ◽  
J. -E. Paultre ◽  
Z. Bougrioua ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Structural Characterization ◽  
Self Assembled

scholarly journals Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Artur Broda ◽  
Bartosz Jeżewski ◽  
Iwona Sankowska ◽  
Michał Szymański ◽  
Paweł Hoser ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Spectral Range ◽  
Molecular Beam ◽  
External Cavity ◽  
Cavity Surface ◽  
Emission Properties ◽  
Surface Emitting Laser

AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.

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