Role of Eu2+luminescent centers in the electro‐optical characteristics of red‐emitting CaS:Eu thin‐film electroluminescent devices with memory

1990 ◽  
Vol 68 (7) ◽  
pp. 3578-3583 ◽  
Author(s):  
M. Ando ◽  
Y. A. Ono
Keyword(s):  
Thin Film ◽  
Optical Characteristics ◽  
Electroluminescent Devices ◽  
Luminescent Centers ◽  
With Memory

The Role of Stacked Insulating Layers on Thin-Film Electroluminescent Devices

1987 ◽  
Vol 26 (Part 1, No. 7) ◽  
pp. 1064-1068 ◽  
Author(s):  
Junichi Ohwaki ◽  
Noriyoshi Yamauchi ◽  
Haruki Kozawaguchi ◽  
Bunjiro Tsujiyama
Keyword(s):  
Thin Film ◽  
Electroluminescent Devices

Role of space charge in SrS:Ce thin‐film electroluminescent devices studied by the photoirradiation effect

1995 ◽  
Vol 67 (7) ◽  
pp. 944-946 ◽  
Author(s):  
Koutoku Ohmi ◽  
Katsuaki Ishitani ◽  
Shosaku Tanaka ◽  
Hiroshi Kobayashi
Keyword(s):  
Thin Film ◽  
Space Charge ◽  
Electroluminescent Devices

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Role of MicroRNA Genes miR-1000 and miR-375 in Forming Olfactory Conditional Memory in Drosophila melanogaster

MicroRNA ◽  
2020 ◽  
Vol 09 ◽  
Author(s):  
Sadniman Rahman ◽  
Chaity Modak ◽  
Mousumi Akter ◽  
Mohammad Shamimul Alam
Keyword(s):  
Learning And Memory ◽  
Short Term Memory ◽  
Memory Loss ◽  
Memory Formation ◽  
Neural Integration ◽  
Significant Difference ◽  
Locomotion Speed ◽  
Microrna Genes ◽  
With Memory

Background: Learning and memory is basic aspects in neurogenetics as most of the neurological disorders start with dementia or memory loss. Several genes associated with memory formation have been discovered. MicroRNA genes miR-1000 and miR-375 were reported to be associated with neural integration and glucose homeostasis in some insects and vertebrates. However, neuronal function of these genes is yet to be established in D. melanogaster. Objective: Possible role of miR-1000 and miR-375 in learning and memory formation in this fly has been explored in the present study. Methods: Both appetitive and aversive olfactory conditional learning were tested in the miR-1000 and miR-375 knockout (KO) strains and compared with wild one. Five days old third instar larvae were trained by allowing them to be associated with an odor with reward (fructose) or punishment (salt). Then, the larvae were tested to calculate their preferences to the odor trained with. Learning index (LI) values and larval locomotion speed were calculated for all strains. Results: No significant difference was observed for larval locomotion speed in mutant strains. Knockout strain of miR-1000 showed significant deficiency in both appetitive and aversive memory formation whereas miR-375 KO strain showed a significantly lower response only in appetitive one. Conclusion: The results of the present study indicate important role played by these two genes in forming short-term memory in D. melanogaster.

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