Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces

2010 ◽  
Vol 108 (2) ◽  
pp. 023711 ◽  
Author(s):  
Wilhelm Melitz ◽  
Jian Shen ◽  
Sangyeob Lee ◽  
Joon Sung Lee ◽  
Andrew C. Kummel ◽  
...  
2017 ◽  
Vol 19 (15) ◽  
pp. 9872-9878 ◽  
Author(s):  
Hrishikesh Bhunia ◽  
Abhijit Bar ◽  
Abhijit Bera ◽  
Amlan J. Pal

Gapless edge-states with a Dirac point below the Fermi energy and band-edges at the interior observed in 2D topological insulators.


2016 ◽  
Vol 4 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Hrishikesh Bhunia ◽  
Biswajit Kundu ◽  
Soumyo Chatterjee ◽  
Amlan J. Pal

Heterovalent element substitution at both ionic sites of PbS achieved during film formation. The dopants introduced free carriers in the semiconductor affecting the Fermi energy, which has been located by STS studies.


Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 15117-15126 ◽  
Author(s):  
Nataraju Bodappa ◽  
Ulrike Fluch ◽  
Yongchun Fu ◽  
Marcel Mayor ◽  
Pavel Moreno-García ◽  
...  

The energy level spectra for Au144 MPCs were probed by voltammetry and scanning tunneling spectroscopy from cluster arrays to individual clusters.


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